Untitled
Abstract: No abstract text available
Text: V30M120CxM3, VI30M120CxM3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
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V30M120CxM3,
VI30M120CxM3
O-220AB
O-262AA
22-B106
AEC-Q101
V30M120C
VI30M120C
2002/95/EC.
2002/95/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
|
Original
|
V30M120C,
VI30M120C
O-220AB
O-262AA
22-B106
AEC-Q101
V30M120C
2002/95/EC.
2002/95/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VB30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses
|
Original
|
VB30M120C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product V60200PG Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60200PG
2002/95/EC
2002/96/EC
O-247AD
O-247s
08-Apr-05
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PDF
|
stps10
Abstract: JESD97 STPS10L60C STPS10L60CFP STPS10L60CG-TR
Text: STPS10L60C Power Schottky rectifier Main product characteristics A1 IF AV 2x5A VRRM 60 V Tj (max) 150° C VF (max) 0.52 V K A2 K Features and benefits A2 ● Low forward voltage drop ● Negligible switching losses ● Insulated package: TO-220FPAB Insulating voltage = 2000 V DC
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Original
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STPS10L60C
O-220FPAB
STPS10L60CFP
STPS10L60CG
O-220FPAB
stps10
JESD97
STPS10L60C
STPS10L60CFP
STPS10L60CG-TR
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VF30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses
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Original
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VF30M120C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VB30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-263AB • Low forward voltage drop, low power losses
|
Original
|
VB30M120C
O-263AB
J-STD-020,
2002/95/EC
2002/96/EC
2011/65/EU
2002/95/EC.
2011/65/EU.
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PDF
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STPS10L60CF
Abstract: STPS10L60CFP
Text: STPS10L60CF/CFP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS • ■ ■ ■ LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES INSULATED PACKAGE: Insulating voltage = 2000V DC
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Original
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STPS10L60CF/CFP
ISOWATT220AB
STPS10L60CF
O-220FPAB
STPS10L60CFP
ISOWATT220AB,
O-220FPAB
STPS10L60CF
STPS10L60CFP
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product V30M120C, VI30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB • Low forward voltage drop, low power losses
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Original
|
V30M120C,
VI30M120C
O-220AB
O-262AA
22-B106
2002/95/EC
2002/96/EC
V30M120C
2011/65/EU
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PDF
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V60H150PW-M3
Abstract: No abstract text available
Text: V60H150PW-M3 www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES TMBS • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60H150PW-M3
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V60H150PW-M3
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PDF
|
V60H150PW-M3
Abstract: No abstract text available
Text: V60H150PW www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 10 A FEATURES • Trench MOS Schottky technology TMBS • Low forward voltage drop, low power losses • High efficiency operation
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Original
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V60H150PW
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
V60H150PW-M3
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PDF
|
Untitled
Abstract: No abstract text available
Text: VF30M120C www.vishay.com Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
|
VF30M120C
ITO-220AB
22-B106
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VFT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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VFT1080S
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VFT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB • Low forward voltage drop, low power losses • High efficiency operation
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Original
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VFT2080C
ITO-220AB
22-B106
2002/95/EC
2002/96/EC
11-Mar-11
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: New Product VT1080S, VFT1080S, VBT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses
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Original
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VT1080S,
VFT1080S,
VBT1080S,
VIT1080S
O-220AB
ITO-220AB
J-STD-020,
O-263AB
VT1080S
VFT1080S
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PDF
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STPS10L60CF
Abstract: No abstract text available
Text: STPS10L60CF POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS A1 IF AV 2x5A VRRM 60 V Tj (max) 150 °C VF (max) 0.52 V K A2 FEATURES AND BENEFITS A2 LOW FORWARD VOLTAGE DROP NEGLIGIBLE SWITCHING LOSSES A1 K ISOWATT220AB DESCRIPTION Dual center tap Schottky rectifiers suited for
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Original
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STPS10L60CF
ISOWATT220AB
ISOWATT220AB,
STPS10L60CF
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VT2080C, VFT2080C, VBT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology ITO-220AB TO-220AB • Low forward voltage drop, low power losses
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Original
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VT2080C,
VFT2080C,
VBT2080C,
VIT2080C
O-220AB
ITO-220AB
J-STD-020,
O-263AB
VT2080C
VFT2080C
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation
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Original
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VT1080S,
VIT1080S
O-220AB
O-262AA
22-B106
AEC-Q101
VT1080S
2002/95/EC
2002/96/EC
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PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation
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Original
|
VT1080S,
VIT1080S
O-220AB
O-262AA
22-B106
AEC-Q101
VT1080S
2002/95/EC
2002/96/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation
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Original
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VT2080C,
VIT2080C
O-220AB
O-262AA
22-B106
AEC-Q101
VT2080C
2002/95/EC
2002/96/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VT2080C, VIT2080C Vishay General Semiconductor Dual Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS • Trench MOS Schottky technology TO-220AB TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation
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Original
|
VT2080C,
VIT2080C
O-220AB
O-262AA
22-B106
AEC-Q101
VT2080C
2002/95/EC
2002/96/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: New Product VT1080S, VIT1080S Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.52 V at IF = 5 A FEATURES TMBS TO-220AB • Trench MOS Schottky technology TO-262AA • Low forward voltage drop, low power losses K • High efficiency operation
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Original
|
VT1080S,
VIT1080S
O-220AB
O-262AA
22-B106
AEC-Q101
VT1080S
2002/95/EC
2002/96/EC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: ^77. STPS10L60CF POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS I f a v 2x5A V rrm 60 V Tj (max) 150 °C V f (max) 0.52 V FEATURES AND BENEFITS • LOW FORWARD VOLTAGE DROP ■ NEGLIGIBLE SWITCHING LOSSES DESCRIPTION Dual center tap Schottky rectifiers suited for
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OCR Scan
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STPS10L60CF
ISOWATT220AB,
|
PDF
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smd diode UM 35
Abstract: smd JH DSAIH0002551
Text: Low Leakage Diode Applications 1 N 3595 I DO-35 Glass Package Used in instrum entation applications, where low leakage and high voltage isolation are important. Features DO-35 Glass Package n o m in a l d im e n s io n s Six sigm a quality M etallurgical^ bonded
|
OCR Scan
|
DO-35
LL-34/35
il-S-19500/24'
MIL-STD-750
N3595-1
-213A
LL3595)
3595U
smd diode UM 35
smd JH
DSAIH0002551
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PDF
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