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    0.5-UM CMOS STANDARD CELL LIBRARY Search Results

    0.5-UM CMOS STANDARD CELL LIBRARY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    0.5-UM CMOS STANDARD CELL LIBRARY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    bsim3 model

    Abstract: "X-Fab" Core cell library CX06 transistors bipolar CMOS spice model PMOS MODEL PARAMETERS SPICE TS16 analog devices transistor tutorials mos15 bsim3
    Text: 0.6 m CMOS Process CX06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX06 Series is X-FAB‘s 0.6 Micron Modular Mixed Signal Technology. Main target applications


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    80C51

    Abstract: MDL90 STD90 STDH90 carry select adder multiplier using CARRY SELECT adder 4 bit adder hspice
    Text: 1 Introduction 1 Table of Contents 1.1 Library Description. 1-1 1.2 Features. 1-2


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    STDH90/MDL90 STD90/MDL90. 80C51 MDL90 STD90 STDH90 carry select adder multiplier using CARRY SELECT adder 4 bit adder hspice PDF

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


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    CMOS

    Abstract: hv 102 mos fet transistor varactor diode model in ADS bsim3 ADS varactor diode 0.18 micron 1.8V pspice model BSIM3V3 bsim3 model bsim3 model for 0.18 micron technology for hspice N-Channel jfet 100V depletion
    Text: 0.6 m CMOS Process XC06 MIXED-SIGNAL FOUNDRY EXPERTS 0.6 Micron Modular Mixed Signal Technology Description Key Features The XC06 Series completes X-FAB‘s 0.6 Micron Modular Mixed Signal Technology with embedded Non Volatile Memory and High Voltage options.


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    CMOS

    Abstract: No abstract text available
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    NMOS depletion pspice model

    Abstract: NMOS MODEL PARAMETERS SPICE "X-Fab" Core cell library PSPICE MODEL R2R bsim3 ADS bsim3 model SPECTRE MODEL QS 100 NPN Transistor RP20 analog devices transistor tutorials
    Text: 1.0 m CMOS Process XC10 MIXED-SIGNAL FOUNDRY EXPERTS One Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The XC10 Series is X-FAB‘s One-Micron Modular Mixed Signal Technology. Main target applications


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    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials PDF

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


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    XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3 PDF

    transistor bL P09

    Abstract: MB625xxx mb62xxxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M
    Text: FUJITSU MIC R OE LE CT RON IC S 23E D 374=17132 0 0 1 0 2 5 3 7 _ F U JITSU T - 4 2 - 4 U UHB SERIES 1.5// CMOS GATE ARRAYS K _ MB62XXXX MB60XXXX September 1988 Edition 1.1 DESCRIPTION The UHB series of 1.5-mlcron CMOS gate arrays Is a highly Integrated low-power, ultra high-speed product family that derives Its


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    MB62XXXX MB60XXXX T-160P F160001S-2C 40-LEAD OIP-40P-M U1M1T60 D40008S-1Ç transistor bL P09 MB625xxx mb620 transistor phl 218 MB623xxx mb625 MB624xxx N4KD FPT-70P-M PDF

    kd 2902

    Abstract: No abstract text available
    Text: Tem ic Composite Arrays MATRA MHS MG1M 0.6 jLimCMOS Composite Arrays Hus document presents an overview of MG1M characteristics. For farther information, a full datasheet can be provided upon request. Description M G1M Composite A rray is an enhanced em bedded array


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    ac cdi schematic diagram

    Abstract: dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices"
    Text: cl o cot S '/ t ó CALIFORNIA DEVICES INC. /¿vi o^ f DLM SERIES HCMOS Gate Arrays 000935 April 1985 PRODUCT FEATURES DLM SERIES FAMILY ORGANIZATION ^ • High perform anc^ 3 ^ ^ silicon gate HC^MOSJechnology. P art N um ber ■ From 210 to 10,152 equivalent 2-input gates.


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    pi880 D-6050 5M85/Printed ac cdi schematic diagram dc cdi schematic diagram cdi schematic cdi circuit diagram California Devices cdi schematics equivalent transistor bc 107 off grid inverter schematics cdi wiring diagram "california devices" PDF

    CC650

    Abstract: UTC A11 ECL IC NAND
    Text: A R rP nR cFLI i i IvMi iIi M NM n Yi DEVICE SPECIFICATION Zs /A / zj - L rF=ü r=û [Ml IMI — — n Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM C C Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760,


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    Q14000 CC650 UTC A11 ECL IC NAND PDF

    Untitled

    Abstract: No abstract text available
    Text: Temic MG1 S e m i c o n d u c t o r s MG1 Sea of Gates Series 0.6 Micron CMOS Description The MG1 series is a 0.6 micron, array based, CMOS product family offering a new frontier in integration and speed. Several arrays up to 500k cells cover all system integration needs. The MG1 is manufactured using


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    BOUT12 PDF

    Pioneer SSA 40

    Abstract: G4060 LT 6732 IMI6140 G4420
    Text: /y INTERNATIONAL MICROCIRCUITS INCORPORATED ^ G io v o o /i/û o o f / V ^ u y I r ’; ~ j> LTj _ < ¿6 ' >L ^ '- i-G -p - PRODUCT FEATURES IM I DESIGN CYCLE FLOWCHART 2.0 and 3.5 Micron CMOS Single and Dual Level Metal cr~ Up to 6200 2-input NAND equivalents ^


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    885-10K Pioneer SSA 40 G4060 LT 6732 IMI6140 G4420 PDF

    LC97000

    Abstract: LC9600 97000Series sanyo lc9600 DIP18 LC90 DIP52 LC92000
    Text: SAN YO S E M I C O N D U C T O R CO RP 22E D • 7^707^ QOQbbTñ 1 ■ LC9600Series, 97000Series CM OS LSI Standard Cell 2722A O verview The LC9600, 97000 Series CMOS Standard Cells offer the flexibility and simplicity of semi-custom design using standard cells, together with the convenience of function cell and I/O cell compatibility


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    LC9600Series, 97000Series 2722a LC9600, LC9100 LC92000 LC9600 LC97000 DIP64S qip48a sanyo lc9600 DIP18 LC90 DIP52 PDF

    MN56020

    Abstract: QFP40 MN56030 mn53000 S8480 QFP-40 mn5504 N530 I/MN56050
    Text: • CMOS Gate Arrays •S eries Lineup Delay Time * Series Features Low gate, Few pin package MN53000 1.4ns V d d “ 5V MN55000 Fixed ROM/RAM built-in (RAM 2Kbit, 4Kbit) MN56000 Standard channel type gate array Sea-of-gate, Optional bit, Word RAM/ROM possible, RAM 16Kbit max., ROM 64Kbit max.


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    MN53000 MN55000 MN56000 MN56A00 MN56E00 MN56B00 MN59000 MN5AA000 MN5AC000 16Kbit MN56020 QFP40 MN56030 S8480 QFP-40 mn5504 N530 I/MN56050 PDF

    Pioneer SSA 40

    Abstract: g70490 G4060 IMI6170 G70250 IMI6000 IMI6140 IMI6270 IMI6330 IMI6430
    Text: INTERNATIONAL M ICROCIRCUITS -INCORPORATED PRO DUCT FEATURES IM I D E S IG N CYCLE FLOW CHART 2.0 and 3.5 Micron CMOS er-' Single and Dual Level Metal Up to 6200 2-input NAN D equivalents ^ Up to 158 I/O connections Ultra High Speed TTL and CMOS Compatible


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    Untitled

    Abstract: No abstract text available
    Text: M T C -1 2 0 0 0 C M O S 1 .2 u Standard Cell Library Services CMOS Family Features • Technology: - 1.2 micron tw in -w ell CMOS process w ith polycide gates, double layer m etal, linear Ihin oxide capacitors and high ohmic resistors - Shrink capability to


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    BHDA08A BHAD12A BHSD14A PDF

    Untitled

    Abstract: No abstract text available
    Text: HONEYWELL DIGITAL PRODUCT hh De| M S S m S 3 0Q000D2 h ;T-4:2-ll-09 JULY 1985 RICMOS GATE ARRAY HC3500R PRODUCT DESCRIPTION The HC3500R Gate Array Figure 1 is a 2 nano­ second, 3854 equivalent gate density Very Large Scale Integration (VSLI) monolithic integrated circuit built


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    0Q000D2 2-ll-09 HC3500R J-42-11-09 HC3500R 0DQ0013 T-42-11-09 PDF

    H157D1

    Abstract: D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B
    Text: PRELIMINARY DEVICE SPECIFICATION Q14000 SERIES BiCMOS LOGIC ARRAYS DESCRIPTION The AM CC Q14000 Series of BiCM OS logic arrays is com prised of four products with densities of 2160, 5760, 9072 and 13,440 equivalent gates. The series is optimized to provide CMOS densities with b ip ola r perform ance


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    Q14000 /D1113-0988 H157D1 D1113 A7 NPN EPITAXIAL TRANSISTOR D1113 ECL100K ECL10K Q14000B Q2100B Q6000B Q9100B PDF

    G2265E

    Abstract: No abstract text available
    Text: Temic MG2RT Semiconductors Radiation Tolerant 0.5-jim CMOS Sea-of-Gates 100k Rad Low Dose Rate Introduction The MG2RT series is a 0.5 micron, array based, CMOS product family. Several arrays up to 700k cells cover all system integration needs. The MG2RT is manufactured


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    BOUT12 G2265E PDF

    dc cdi schematic diagram

    Abstract: ac cdi schematic diagram cdi schematic oz 8602 gm dm165 DM240 cdi schematics CMOS 4000 Series family databook DM195 DM273
    Text: cot CHA SERIES HCMOS ,TM Channelless Logic Arrays C A LIFO R N IA D EVICES IN C. <v < *> *& 005373 November 1986 AJ A - A i c 9 x PRODUCT FEATURES CHA SERIES FAMILY ORGANIZATION -c o o • High performance 2 ¡im silicon gate HCMOS technology. Part Num ber


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    9957S> 8602-R1 5M11-86/Printed dc cdi schematic diagram ac cdi schematic diagram cdi schematic oz 8602 gm dm165 DM240 cdi schematics CMOS 4000 Series family databook DM195 DM273 PDF

    AOI222

    Abstract: P02B OAI222
    Text: ATL50 Features • • • • • • • • 0.5|.im Drawn Gate Length 0.45|am Left Sea-of-Gates Architecture With Triple Level Metal 3.3 Volt Operation 5.0 Volt compatible input buffers On-Chip Phase Locked Loop (PLL) Available to Synthesize Frequencies up to


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    ATL50 ATL50 AOI222 P02B OAI222 PDF

    H7442

    Abstract: Matra-Harris Semiconductor
    Text: MB GATE ARRAY SERIES 2/t/2 METAL LAYERS M ÌM ÌIII /MATRA' HARRIS SEMICONDUCTOR MB 850 • MB 1300 • MB 2000 MB 2700 • MB 4000 - MB 5000 -MB 7500 MAY 1986 PR B LÎISIÈ S A R V Features MACRO CELL LIBRARY EXTENSION CAPABILITY : - COMBINATIONAL AND SEQUENTIAL


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