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    0.35 UM CMOS TECHNOLOGY Search Results

    0.35 UM CMOS TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet

    0.35 UM CMOS TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    MOS RM3

    Abstract: mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" XH035 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 MOS RM3 mos rm3 data "X-Fab" Core cell library ESD "p-well" n-well" 0.18 um CMOS Spiral Inductor technology bsim3v3 RM3 transistors Q100 analog devices transistor tutorials

    XH035 library

    Abstract: depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 XH035 analog devices transistor tutorials MOS RM3
    Text: 0.35 µm CMOS Process Family XA035 MIXED-SIGNAL FOUNDRY EXPERTS 0.35 Micron High Temperature Modular CMOS Technology Description The XA035 Series is X-FAB‘s 0.35 Micron High Temperature CMOS Technology. Main target applications are high temperature automotive and


    Original     		PDF XA035 XA035 35-micron XH035 XH035 library depl "X-Fab" Core cell library nmos transistor 0.35 um cmos transistor 0.35 um CMOS spice model Q100 analog devices transistor tutorials MOS RM3

    Untitled

    Abstract: No abstract text available
    Text: Foundry Services May 2010 Peregrine’s UltraCMOS RF and Mixed-Signal Wafer Foundry Services Unprecedented benefits in speed, power, integration and cost The UltraCMOS process is a patented silicon-on-sapphire technology SOS that has for years been recognized as a


    Original     		PDF Tower10B-6

    hv2300

    Abstract: AXTO bsim3 model for 0.18 micron technology for hspice adc04 x-fabs 0.8um nmos bsim3 model parameters bsim3 model analog devices transistor tutorials analogue digital converter instrumentation delta application instrumentation projects
    Text: 0.8 m CMOS Process CX08 MIXED-SIGNAL FOUNDRY EXPERTS 0.8 Micron Modular Mixed Signal Technology Description Key Features Applications Quality Assurance Deliverables The CX08 Series is X-FAB‘s 0.8 Micron Modular Mixed Signal Technology. Main target applications are standard cell, semi-custom and full custom


    Original     		PDF

    nmos transistor 0.35 um

    Abstract: No abstract text available
    Text: UltraCMOS Process Technology May 2010 UltraCMOSTM Technology - The Ultimate SOI Ultra-Thin-Silicon UTSi on sapphire substrates enables monolithic RF integration The need for RF products and components that are smaller, higher performance, more efficient and less expensive is


    Original     		PDF s3857 Tower10B-6 nmos transistor 0.35 um

    Untitled

    Abstract: No abstract text available
    Text: CXA4420GC SP5T+ SP5T SOI Antenna Switch with MIPI Interface for Qualcomm chipset CXA4420GC Description CXA4420GC is the SP5T+SP5T antenna diversity switch for WCDMA/3G/LTE applications. CXA4420GC has a 1.8 V CMOS compatible decoder with Qualcomm chipset. The SONY Silicon On Insulator SOI technology is used for low insertion loss.


    Original     		PDF CXA4420GC CXA4420GC

    71016s

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN PCN #: SR0011-04 DATE: Product Affected: 71016S, 71124S, 71128S Manufacturing Location Affected: N/A Date Effective: Contact: Title: Phone #: Fax #:


    Original     		PDF SR0011-04 71016S, 71124S, 71128S 71016s

    Untitled

    Abstract: No abstract text available
    Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA2947GC CXA2947

    Untitled

    Abstract: No abstract text available
    Text: Dual-SP3T SP3Tx2 SOI Antenna Switch CXA2947GC Description The CXA2947 is Rx power SP3Tx2 antenna switch for balanced signal switching application. The CXA2947 has a 1.8 V CMOS compatible decoder. The SONY Silicon On Insulator (SOI) technology is used for low insertion loss.


    Original     		PDF CXA2947GC CXA2947

    Untitled

    Abstract: No abstract text available
    Text: Integrated Device Technology, Inc. 2975 Stender Way, Santa Clara, CA - 95054 PRODUCT/PROCESS CHANGE NOTICE PCN DATE: PCN #: SR 9908-07 Product Affected: 71V546S, 71V547S September 20, 1999 MEANS OF DISTINGUISHING CHANGED DEVICES: Product Mark "Y" Die step on top mark


    Original     		PDF 71V546S, 71V547S FRC-1509-01 QCC-1795

    1 kilo ohm resistor specifications

    Abstract: RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM
    Text: Standard Features • • • • • • • • 3.3V CMOS Transistors NPN Transistors Lateral PNP Transistors Analog Resistors Mono-Silicon Capacitor Schottky Diode Poly Fusing Element Multilevel Metallization-Metal Layers 1-3 Optional Features • • •


    Original     		PDF AT46700 1 kilo ohm resistor specifications RESISTOR 10 KILO OHM 100 KILO OHM RESISTOR atmel 802 polysilicon resistor atmel 813 1 kilo ohm resistor 10 kilo ohm resistor 3.3 kilo ohm resistor RESISTOR 1 KILO OHM

    AT28C256-25

    Abstract: 28C256 AT28C256 AT28C256-15 AT28C256-20 AT28C256-35 AT28C256F LM 2222
    Text: AT28C256 Features • • • • • • • • • • • Fast Read Access Time - 150 ns Automatic Page Write Operation Internal Address and Data Latches for 64-Bytes Internal Control Timer Fast Write Cycle Times Page Write Cycle Time: 3 ms or 10 ms Maximum


    Original     		PDF AT28C256 64-Bytes 64-Byte AT28C256-25 28C256 AT28C256 AT28C256-15 AT28C256-20 AT28C256-35 AT28C256F LM 2222

    HBT 01 - 05

    Abstract: dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G
    Text: A 0.18lm 90 GHz fT SiGe HBT BiCMOS, ASIC-Compatible, Copper Interconnect Technology for RF and Microwave Applications G. Freeman, D. Ahlgren, D.R. Greenberg*, R. Groves, F. Huang, G. Hugo, B. Jagannathan, S.J. Jeng, J. Johnson*, K. Schonenberg*, K. Stein, R. Volant, S. Subbanna


    Original     		PDF 90GHz, 90GHz HBT 01 - 05 dr 25 germanium diode HBT 01 05G Silicon germanium Heterojunction Bipolar Transistor GERMANIUM SMALL SIGNAL TRANSISTORS poly silicon resistor 1lm2 0.18 um CMOS parameters hbt 05 HBT 01 - 01 G

    MIL-STD-883 Method 3015.7

    Abstract: atmel lot marking eeprom atmel 922 AT89C5114 breakdown gate oxide atmel 336 DYNAMIC RAM CROSS REFERENCE Atmel eeprom Cross Reference Atmel 434 Atmel AT35523 Product Reliability Test
    Text: T8xC5121 QualPack Qualification Package T8xC5121 C51 Microcontrollers T8xC5121 FEBRUARY 2003 Rev. 0 – 2003 February 1 T8xC5121 QualPack 1 Table of contents 1 TABLE OF CONTENTS .2


    Original     		PDF T8xC5121 T8xC5121 MIL-STD-883 Method 3015.7 atmel lot marking eeprom atmel 922 AT89C5114 breakdown gate oxide atmel 336 DYNAMIC RAM CROSS REFERENCE Atmel eeprom Cross Reference Atmel 434 Atmel AT35523 Product Reliability Test

    MC74 motorola

    Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
    Text: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    OCR Scan     		PDF MC74VHC04 51Ting DL203 ------------------------------MC74VHC04/D MC74 motorola MC74 MC74VHCXXD MC74VHCXXDT 3B252

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t XOR G ate M C 74VH C 86 The MC74VHC86 is an advanced high speed CMOS 2-input Exclusive-OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similarto equivalent Bipolar Schottky TTL while maintaining


    OCR Scan     		PDF MC74VHC86 14-LEAD 51A-03 DL203 b3b7255 aiaQM57 MC74VHC86/D

    2JTA

    Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
    Text: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    OCR Scan     		PDF MC74VHC74 303-675-2140or 51Ting MC74VHC74/D DL203 1G045S 2JTA DL203 MC74VHCXXD MC74VHCXXDT MC74VHCXXM

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS ADDRESS/ CLOCK DRIVER IDT54/74FCT163344/A/C ADVANCE INFORMATION Integrated Device T echnology, Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • Typical tSK o (Output Skew) < 250ps • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0)


    OCR Scan     		PDF IDT54/74FCT163344/A/C 250ps MIL-STD-883, 200pF, FCT163344/be E56-1) 63344A

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed


    OCR Scan     		PDF T240A MC74VHCT240A do80217 MC74VHCT240A/D DL203

    Untitled

    Abstract: No abstract text available
    Text: TC74LVX4245FS TENTATIVE DUAL SUPPLY OCTAL BUS TRANSCEIVER The TC74LVX4245 is a dual supply , advanced high speed CMOS OCTAL BUS TRANSCEIVER fabricated with silicon gate CMOS technology. Designed for use as an interface between a 5V bus and a 3.3V bus in mixed 5V / 3.3V supply systems’ it achieves high


    OCR Scan     		PDF TC74LVX4245FS TC74LVX4245 24PIN SSOP24-P-3QQA)

    TI3H

    Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining


    OCR Scan     		PDF MC74VHCU04 Colorado80217 3Q3-675-2140or MC74VHC U04/D DL203 TI3H DL203 TAG9 G100B

    um 44 diode

    Abstract: MC74VHCT132A
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t NAND Schm itt Trigger M C 74V H C T132A The MC74VHCT132A is an advanced high speed CMOS Schmitt NAND trigger fabricated with silicon gate CMOS technology. It achieves high speed operation sim ilar to equivalent Bipolar S chottky TTL w hile m aintaining


    OCR Scan     		PDF MC74VHCT132A MC74VHC00, VHCT132A C74VH CT132 um 44 diode

    Untitled

    Abstract: No abstract text available
    Text: 3.3V CMOS 1-TO-10 CLOCK DRIVER IDT54/74FCT3807/A PRELIMINARY Integrated Device Technology, Inc. FEATURES: 0 .5 M IC R O N C M O S Technology Available in D IP, S O IC , S S O P , C erpack and LC C packages G u aranteed low skew < 350ps m ax. Military product compliant to M IL -S T D -8 8 3 , Class B


    OCR Scan     		PDF 1-TO-10 IDT54/74FCT3807/A 350ps MIL-STD-883,