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    0.25 CMOS TECHNOLOGY Search Results

    0.25 CMOS TECHNOLOGY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    CS-SATDRIVEX2-001 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-001 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 1m Datasheet
    CS-SATDRIVEX2-002 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-002 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 2m Datasheet
    CS-SATDRIVEX2-000.5 Amphenol Cables on Demand Amphenol CS-SATDRIVEX2-000.5 Serial ATA Extension Cable - SATA II Drive Extension Cable with Power (6.0 Gbps) 0.5m Datasheet

    0.25 CMOS TECHNOLOGY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CMOS

    Abstract: AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model
    Text: 0.25 m CMOS Process FC025 MIXED-SIGNAL FOUNDRY EXPERTS 0.25 Micron CMOS Technology Description Key Features Applications Quality Assurance Deliverables Digital Libraries Analog Libraries Primitive Devices The FC025 series is X-FAB’s 0.25-micron Modular


    Original     		PDF FC025 FC025 25-micron CMOS AF32K8AF25 NMOS native pspice model resistor bsim3 6T SRAM micron cmos sensor connection BSIM3 nmos transistor pmos Vt bsim3 model

    5962-06203

    Abstract: 5962-07210 "rad" sram
    Text: Aeroflex 4M SRAM Industry Comparison 0.18µm CMOS Aeroflex 0.25µm Bulk CMOS 0.35µm CMOS SOI 0.25µm CMOS 0.18µm 0.25µm 0.35µm 0.25µm 66 MHz @ 15ns 512K x 8 15 ns -55° to 125°C 28MHz @ 30 ns 512K x 8 30ns(-550 to 1250C) 40 MHz @20ns 512K x 8 < 20 ns (-550 to 1250C)


    Original     		PDF 28MHz 1250C) 66MHz 1x10-10 8x10-10 1x10-9 5962-06203 5962-07210 "rad" sram

    ARM SRAM compiler

    Abstract: poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library
    Text: 0.25 µm CMOS Process Family FC025 0.25 µm CMOS process for 2.5V logic and mixed-signal applications Main Process Features with 3.3V or 5V I/O Single Poly and up to 5 Metal Layers FC025 Process section Pad Well Architecture: Retrograde Twin Well Nitride Pad


    Original     		PDF FC025 FC025 ARM SRAM compiler poly silicon resistor 2P3M CMOS Process Family polysilicon resistor 6T SRAM SST superflash NMOS-2 BSIM3V3 0.25-um standard cell library

    Atmel oak dsp core

    Abstract: block diagram for barrel shifter PPAP "saturation arithmetic"
    Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • Low-power Consumption: • • • • • • • • • • • – 1 mW/MIPS on 0.25-micron CMOS, 2.5V – 0.6 mW/MIPS on 0.20-micron CMOS, 1.8V High Performance: – 80 MIPS at 160 MHz (Typical) on 0.25-micron CMOS, 2.5V


    Original     		PDF 16-bit 25-micron 20-micron 0876F Atmel oak dsp core block diagram for barrel shifter PPAP "saturation arithmetic"

    GPIP

    Abstract: TEAKDSPCORE
    Text: Features • 16-bit Fixed-point Digital Signal Processing DSP Core • High Performance: • • • • • • • • • • • • – 140 MHz (Typical) on 0.25-micron CMOS, 2.5V – 180 MHz (Typical) on 0.18-micron CMOS, 1.8V – 180 TeakDSPCore MIPS – Sustained on 0.25 micron CMOS, 2.5V


    Original     		PDF 16-bit 25-micron 18-micron 1395B 03/01/0M GPIP TEAKDSPCORE

    PI74AUC16244

    Abstract: PI74AUC16245 PI74SSTVF16857 PI74SSTVF16859 PI74SSTVF32852
    Text: Date: August 5, 2005 Subject: Pericom Reliability Qualification – CSM-S Fab 2’s CMOS, 0.25 µm, 2.5V, 1P3M Process Chartered Semiconductor Manufacturing – Singapore Fab 2’s CMOS, 0.25-µm, 2.5 volt, Single Poly/Triple Metal 1P3M process has been qualified to Pericom’s standard die level process


    Original     		PDF PI74SSTVF16857 PI74SSTVF16857 Q03003 PI74SSTVF16859, PI74SSTVF32852, PI74AUC16244, PI74AUC16245. PI74AUC16244 PI74AUC16245 PI74SSTVF16859 PI74SSTVF32852

    IBM Microelectronics

    Abstract: PEPI
    Text: September 2001 IBM Blue Logic CMOS 6RF Technology 0.25 µm CMOS technology for wireless applications Highlights • IBM proven CMOS technology with radio frequency RF , analog and mixed-signal enhancements, optimal for wireless applications • Low-conductivity substrate improves noise isolation


    Original     		PDF

    EXO 32K

    Abstract: OR2C06A OR2C12A OR2T15B OR2T40B
    Text: Data Sheet November 2006 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) EXO 32K OR2C06A OR2C12A OR2T15B OR2T40B

    PL1A

    Abstract: PLC water heater plc pin diagram 25032 PT15D b9 39a data sheet PL1C PT8C OR2C12A OR2T15B OR2T40B
    Text: Data Sheet January 2003 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) PL1A PLC water heater plc pin diagram 25032 PT15D b9 39a data sheet PL1C PT8C OR2C12A OR2T15B OR2T40B

    ci 555

    Abstract: ci 7495 54573 OR2C10A CI 576 OR2C40A S240 "Single-Port RAM"
    Text: Product Brief April 1999 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit PN99-072FPGA PN98-018FPGA) ci 555 ci 7495 54573 OR2C10A CI 576 OR2C40A S240 "Single-Port RAM"

    OR2C06A3T144I-DB

    Abstract: OR2C08A3S208I b9 39a data sheet PL1C PT10c OR2C06A OR2C12A OR2T15B OR2T40B R11C5
    Text: Data Sheet October 2003 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) OR2C06A3T144I-DB OR2C08A3S208I b9 39a data sheet PL1C PT10c OR2C06A OR2C12A OR2T15B OR2T40B R11C5

    OR2C12A

    Abstract: ps304 S208 ATT2C
    Text: Product Brief January 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit 100-Pin 144-Pin 160-Pin 256-Pin BA256 304-Pin S304/ PS304 OR2C12A ps304 S208 ATT2C

    PT15D

    Abstract: OR2T40A-6PS208I R4C18
    Text: Data Sheet August 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit OR2T10A OR2T15A OR2T15B OR2T26A OR2T40A OR2T40B DS99-094FPGA DS98-022FPGA) PT15D OR2T40A-6PS208I R4C18

    PT15D

    Abstract: R17C10
    Text: Data Sheet March 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit OR2T10A OR2T15A OR2T15B OR2T26A OR2T40A OR2T40B DS99-094FPGA DS98-022FPGA) PT15D R17C10

    PL1C

    Abstract: PB7D 100-PIN TQFP XILINX DIMENSION pl30b pl4a pr2a PT10c OR2T15B OR2T40B plc array
    Text: Data Sheet June 1999 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) PL1C PB7D 100-PIN TQFP XILINX DIMENSION pl30b pl4a pr2a PT10c OR2T15B OR2T40B plc array

    TDA 8369

    Abstract: circuit integrate tda 7283 B764E sine wave inverter schematic IVT HS 400 S901E tda 0470 TDA 7277 TDA 9394 tda 7283 CPU 414-2 Processor Module
    Text: STDM110 0.25µm 2.5V CMOS Standard Cell Library for Pure Logic/MDL Products STDM110 0.25µm 2.5V CMOS Standard Cell Library for Pure Logic/MDL Products Data Book  1999 Samsung Electronics Co., Ltd. All rights reserved. No part of this document may be reproduced, in any form or by any means, without the prior


    Original     		PDF STDM110 STDM110 TDA 8369 circuit integrate tda 7283 B764E sine wave inverter schematic IVT HS 400 S901E tda 0470 TDA 7277 TDA 9394 tda 7283 CPU 414-2 Processor Module

    OR2T15A6S240-DB

    Abstract: OR2C06A OR2C12A OR2T15B OR2T40B OR2C06A3T144I-DB AP99-027FPGA OR2C12A-4S208 OR2C26A4PS208-DB OR2C15A3S208I
    Text: Data Sheet October 2003 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 m CMOS technology OR2CxxA , 0.3 μm CMOS technology (OR2TxxA), and 0.25 μm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) OR2T15A6S240-DB OR2C06A OR2C12A OR2T15B OR2T40B OR2C06A3T144I-DB AP99-027FPGA OR2C12A-4S208 OR2C26A4PS208-DB OR2C15A3S208I

    CI 2005

    Abstract: OR2C12A block diagram of 8 bit array multiplier BA256 ATT2C CI 556 ORCA Series 2 CI 576 S208 5 bit multiplier using adders
    Text: Product Brief December 2005 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 m CMOS technology OR2CxxA , 0.3 μm CMOS technology (OR2TxxA), and 0.25 μm CMOS technology


    Original     		PDF 16-bit 32-bit OR2T15B OR2T40B 84-Pin 100-Pin 144-Pin 160-Pin 256-Pin BA256 CI 2005 OR2C12A block diagram of 8 bit array multiplier BA256 ATT2C CI 556 ORCA Series 2 CI 576 S208 5 bit multiplier using adders

    IC 4528

    Abstract: 8 pin diagram 25032 PL1C ps304 R5C4 OR2T15B OR2T40B R8C2 R10C4 R18C
    Text: Data Sheet January 2002 ORCA Series 2 Field-Programmable Gate Arrays Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance, cost-effective, low-power 0.35 µm CMOS technology OR2CxxA , 0.3 µm CMOS technology (OR2TxxA), and 0.25 µm CMOS technology


    Original     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) IC 4528 8 pin diagram 25032 PL1C ps304 R5C4 OR2T15B OR2T40B R8C2 R10C4 R18C

    D78 NEC

    Abstract: spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M
    Text: CB-C10 2.5-Volt, 0.25-Micron drawn CMOS Cell-Based ASIC NEC Electronics Inc. Preliminary March 1997 Figure 1. Chip Size Package (CSP) Description NEC’s 0.25 µm drawn (0.18 µm L-effective) CB-C10 family incorporates ultra-high-performance cores with deep submicron process technology for high-end applications


    Original     		PDF CB-C10 25-Micron CB-C10 A12504EU1V0DS00 D78 NEC spx 1404 DSPG 71051 MCM NAND VR10000 NEC 71055 986M

    LC7367J

    Abstract: LC7367JM
    Text: Ordering number:ENN3095A CMOS IC LC7367J, 7367JM DTMF/PULSE Switchable Dialer Package Dimensions unit:mm 3059-DIP22S [LC7367J] 22 12 0.25 7.62 6.4 1 11 21.2 0.95 0.48 1.78 1.7 SANYO : DIP22S unit:mm 3073A-MFP30 [LC7367JM] 16 1 15 0.25 0.4 1.0 0.6 0.65 30


    Original     		PDF ENN3095A LC7367J, 7367JM 3059-DIP22S LC7367J] DIP22S 073A-MFP30 LC7367JM] 45max 58MHz) LC7367J LC7367JM

    a15#016

    Abstract: PT15D RSC11 5T48
    Text: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 |jm CMOS technology


    OCR Scan     		PDF 16-bit 32-bit DS99-094FPGA DS98-022FPGA) a15#016 PT15D RSC11 5T48

    Untitled

    Abstract: No abstract text available
    Text: Datasheet microelectronics group June 1999 Lucent Technologies Bell Labs Innovations ORCA Series 2 Field-Programmable Gate Arrays Features • High-performance, cost-effective, low-power 0.35 pm CMOS technology OR2CxxA , 0.3 pm CMOS technology (OR2TxxA), and 0.25 pm CMOS technology


    OCR Scan     		PDF 16-bit

    CMOS-10

    Abstract: f-002
    Text: CMOS-10 2.5-Volt, 0.25-M icron drawn CMOS G ate Array NEC NEC Electronics Inc. Preliminary March 1997 Figure 1. Tape BGA and Chip Size Package Description In CMOS-IO, NEC combines high-performance CMOS technology with an advanced 2.5-volt block library and an


    OCR Scan     		PDF CMOS-10 IEEE1394 G1GSG77 f-002