Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power RD07MVS1 by optimizing MOSFET structure.
|
Original
|
PDF
|
RD07MVS1B
175MHz
520MHz
RD07MVS1
RD07MVS1B
520MHz
|
RD07M
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS1 RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING DESCRIPTION 0.2+/-0.05 (0.22) 6.0+/-0.15 specifically designed for VHF/UHF RF power 2.0+/-0.05 1.0+/-0.05 4.9+/-0.15 FEATURES
|
Original
|
PDF
|
RD07MVS1
175MHz
520MHz
RD07MVS1
175MHz)
520MHz)
Oct2011
RD07M
|
Untitled
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD07MVS2 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF power 6.0+/-0.15 0.2+/-0.05 (0.22)
|
Original
|
PDF
|
RD07MVS2
175MHz
520MHz
RD07MVS2
520MHz
175MHz)
520MHz)
|
mos 4069
Abstract: No abstract text available
Text: < Silicon RF Power MOS FET Discrete > RD04HMS2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 (0.22) RD04HMS2 is MOS FET type transistor specifically OUTLINE DRAWING designed for VHF/UHF/890-950MHz RF power
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Oct2011
mos 4069
|
RD04HMS2
Abstract: JAPANESE TRANSISTOR 2010 920MHz TRANSISTOR 636 RD04HMS Diode mark 1445
Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
14dBtyp.
950MHz
UHF/890-950MHz
RD04HMS2
JAPANESE TRANSISTOR 2010
920MHz
TRANSISTOR 636
RD04HMS
Diode mark 1445
|
RD04HMS2
Abstract: Handling Precautions for MOSFET 043mm 14dBtyp
Text: Silicon RF Power Semiconductors RD04HMS2 ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 950MHz, 4W DESCRIPTION 6.0+/-0.15 0.2+/-0.05 0.22 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 OUTLINE DRAWING
|
Original
|
PDF
|
RD04HMS2
175MHz,
950MHz,
RD04HMS2
VHF/UHF/890-950MHz
14dBtyp.
950MHz
UHF/890-950MHz
Handling Precautions for MOSFET
043mm
14dBtyp
|
1SV276
Abstract: No abstract text available
Text: 1SV276 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV276 VCO for UHF Band Radio • Unit: mm High capacitance ratio: C1 V/C4 V = 2.0 typ. • Low series resistance: rs = 0.22 Ω (typ.) • Small package Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
PDF
|
1SV276
1SV276
|
3M Touch Systems
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MVS2 RoHS Compliance,Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 FEATURES 2.0+/-0.05
|
Original
|
PDF
|
RD07MVS2
175MHz
520MHz
RD07MVS2
175MHz)
520MHz)
3M Touch Systems
|
RD02MUS1B
Abstract: RD02MUS1 T112 mosfet 4501 3M Touch Systems
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD02MUS1B RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W DRAWING 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 6.0+/-0.15 2.0+/-0.05 2 3.5+/-0.05
|
Original
|
PDF
|
RD02MUS1B
175MHz
520MHz
RD02MUS1B
RD02MUS1
T112
mosfet 4501
3M Touch Systems
|
irfp460a
Abstract: No abstract text available
Text: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche
|
Original
|
PDF
|
IRFP460A
O-247
irfp460a
|
CDEP104
Abstract: 1R4ML 0r8ml
Text: POWER INDUCTORS <SMD Type: CDEP Series> Type: CDEP104 ◆ Product Description ・10.4x10.4mm Max. L×W ,4.5mm Max. Height. ・Both standard type and Low DCR type of CDEP104 are available. ・Inductance range: 0.22～0.25 H(CDEP104 Standard type); ～ μ
|
Original
|
PDF
|
CDEP104
CDEP104
CDEP104)
at100
100kHz/1V
1R4ML
0r8ml
|
RD07MUS2B
Abstract: RD07MUS2
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,7W DESCRIPTION OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MUS2B is a MOS FET type transistor
|
Original
|
PDF
|
RD07MUS2B
175MHz
527MHz
RD07MUS2B
175MHz)
527MHz)
870MHz)
RD07MUS2
|
Untitled
Abstract: No abstract text available
Text: UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22Ω Features Description • RDS on = 0.185Ω ( Typ.)@ VGS = 10V, ID = 11A • Low gate charge ( Typ. 49nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar
|
Original
|
PDF
|
FDP22N50N
FDP22N50N
|
Untitled
Abstract: No abstract text available
Text: SwitchmodePower Features 40K Series • • • • • • • • Mechanical 1 Maximum power density Toroid design offers high efficiency Versatility Low EMI radiation Full load current range: 0.22 to 7.90 ADC Designed for pick and place Low Cost Dielectric strength to 500VDC
|
Original
|
PDF
|
500VDC
40000R
40034R
|
|
|
IRLI520A
Abstract: No abstract text available
Text: IRLW/I520A Advanced Power MOSFET FEATURES BVDSS = 100 V • Avalanche Rugged Technology RDS on = 0.22 Ω ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ID = 9.2 A ■ Improved Gate Charge ■ Extended Safe Operating Area I2-PAK D2-PAK ■ 175℃ Operating Temperature
|
Original
|
PDF
|
IRLW/I520A
IRLI520ATU
O-262
IRLI520A
|
Untitled
Abstract: No abstract text available
Text: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's
|
Original
|
PDF
|
FDG6301N
|
Untitled
Abstract: No abstract text available
Text: IRLM120A Advanced Power MOSFET FEATURES BVDSS = 100 V n Avalanche Rugged Technology RDS on = 0.22 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 2.3 A n Improved Gate Charge n Extended Safe Operating Area SOT-223 n Lower Leakage Current : 10 µA (Max.) @ VDS = 100V
|
Original
|
PDF
|
IRLM120A
OT-223
IRLM120ATF
|
Untitled
Abstract: No abstract text available
Text: T PL IA N M CO *R oH S Features Applications • Shielded construction ■ Input/output of DC/DC converters ■ Unit height of 5.9 mm ■ Power supplies for: ■ Inductance range: 0.22 to 10 H ■ Current up to 45 A ■ RoHS compliant* • Portable communications equipment
|
Original
|
PDF
|
SRP1250
SRP1250-R22M
SRP1250-R36M
SRP1250-R47M
SRP1250-R50M
SRP1250-R56M
SRP1250-R68M
SRP1250-R82M
SRP1250-1R0M
SRP1250-1R2M
|
SRP4020-3R3M
Abstract: No abstract text available
Text: PL IA NT CO M *R oH S Features Applications • Shielded construction ■ DC/DC converters ■ Flat wire ■ Power supplies for: ■ Unit height of 2 mm R6 8 ■ Inductance range: 0.22 to 3.3 H ■ Rated current up to 10 A ■ RoHS compliant* • Portable communications equipment
|
Original
|
PDF
|
SRP4020
SRP4020-R22M
SRP4020-R36M
SRP4020-R47M
SRP4020-R56M
SRP4020-R68M
SRP4020-2R2M
SRP4020-1R5M
SRP4020-3R3M
|
Untitled
Abstract: No abstract text available
Text: T PL IA N M CO *R oH S Features Applications • Shielded construction ■ DC/DC converters ■ Flat wire ■ Power supplies for: ■ Unit height of 1.2 mm R2 2 ■ Inductance range: 0.22 to 1.5 H ■ Rated current up to 9 A ■ RoHS compliant* and halogen free*
|
Original
|
PDF
|
SRP4012
SRP4012-R22M
SRP4012-R47M
SRP4012-R56M
SRP4012-1R0M
|
IC TB 1237 AN
Abstract: "marking nm" 2SC6024 CBC 337 cbc 547
Text: 2SC6024 Ordering number : ENN8290 NPN Epitaxial Planar Silicon Transistor 2SC6024 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.2dB typ f=2GHz . High cut-off frequency : fT=14GHz typ (VCE=1V). : fT=21GHz typ (VCE=3V).
|
Original
|
PDF
|
2SC6024
ENN8290
14GHz
21GHz
S21e2
IC TB 1237 AN
"marking nm"
2SC6024
CBC 337
cbc 547
|
0.120-80 UNS
Abstract: nut 36 UNS-2A 0.234-64 UNS-2A SG-660B 0.120-80+UNS GAA3R501 GAA10004 GAA6R001 Sprague-Goodman Electronics UNS-2A
Text: ENGINEERING BULLETIN Sprague-Goodman SG-660B Supercedes SG-660A AIRTRIM AIR DIELECTRIC MULTITURN TRIMMER CAPACITORS APPLICATIONS Designed for VHF, UHF and microwave applications: amplifiers, oscillators, filters, radar, cable TV, mobile radios and RF appliances. Suitable for military and
|
Original
|
PDF
|
SG-660B
SG-660A
MIL-C-14409D
GAA10007,
GAA14007
GAA16007
GAA10008,
GAA14008
GAA16008
GAA10009,
0.120-80 UNS
nut 36 UNS-2A
0.234-64 UNS-2A
SG-660B
0.120-80+UNS
GAA3R501
GAA10004
GAA6R001
Sprague-Goodman Electronics
UNS-2A
|
1004 170
Abstract: 0705-6R8M 0705-180M
Text: ● All the data listed in this catalogue are for reference only,TAI-TECH reserves the right to alter or revise the specifications without prior notification. • ■ TPS 0603 Series Part Number Inductance uH Test Frequency (Hz) DCR (Ω) max. IDC (A)max.
|
Original
|
PDF
|
0603-1R0M
V/100K
0603-1R5M
0603-2R2M
0603-3R3M
0603-4R7M
1004 170
0705-6R8M
0705-180M
|
Untitled
Abstract: No abstract text available
Text: NPN MEDIUM POWER UHF-VHF TRANSISTOR NE74000 NE74014 FEATURES_ DESCRIPTION • HIGH GAIN BANDWIDTH PRODUCT: fT = 2.2 GHz The NE740 series of NPN silicon transistors is designed for wide bandwidth VHF and UHF amplifiers. Excellent intermodulation characteristics and low noise make the series
|
OCR Scan
|
PDF
|
NE74000
NE74014
NE740
NE90115
quali16
|
