8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994 8EWS10
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
8EWS08S
8EWS10S
8EWS12S
AN-994
8EWS10
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8EWS10
Abstract: No abstract text available
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
08-Mar-07
8EWS10
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8EWS08S
Abstract: 8EWS10S 8EWS12S AN-994
Text: Bulletin I2108 rev. G 08/00 SAFEIR Series 8EWS.S SURFACE MOUNTABLE INPUT RECTIFIER DIODE VF Description/Features IFSM = 200A < 1V @ 5A VRRM 800 to 1200V The 8EWS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology
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I2108
12-Mar-07
8EWS08S
8EWS10S
8EWS12S
AN-994
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911-32006
Abstract: din 84 911-32046
Text: Power terminals 182 Power terminals Technical specifications Hole specifications Power terminal grid 5.08 x 7.62 mm Power terminal grid 5.08 x 10.16 mm Blade connector Accessories ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de
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Untitled
Abstract: No abstract text available
Text: TGA4506 K Band Low Noise Amplifier Key Features • • • • • • • Preliminary Measured Data Typical Frequency Range: 20 - 27 GHz 21 dB Nominal Gain 2.2 dB Nominal Noise Figure 12 dBm Nominal P1dB Bias 3.5 V, 60 mA 0.15 um 3MI pHEMT Technology Chip Dimensions 1.2 x 0.8 x 0.1 mm
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TGA4506
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Untitled
Abstract: No abstract text available
Text: TCA connectors: AdvancedTCA and MicroTCA® 10 TCA connectors Definitions Technical specifications Derating diagrams Hole specifications AdvancedTCA® Signal AMC B+ AdvancedTCA® Power Notes MicroTCA® Signal AMC MicroTCA® Power ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de
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E130314
Abstract: 60352-5 IEC 60352-5 511-50500-163
Text: TCA connectors: AdvancedTCA and MicroTCA® 10 TCA connectors Definitions Technical specifications Derating diagrams Hole specifications AdvancedTCA® Signal AMC B+ AdvancedTCA® Power Notes MicroTCA® Signal AMC MicroTCA® Power ept GmbH I Phone +49 0 88 61 / 25 01 0 I Fax +49 (0) 88 61 / 55 07 I E-mail sales@ept.de I www.ept.de
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IEC60352-5
Abstract: IEC-60352-5 pcb connectors 60352 C5440 C54400 Preci-Dip CH-2800 802 PRECIDIP CuSn4Pb4Zn4
Text: PRESS-FIT TECHNOLOGY A COST-EFFECTIVE ALTERNATIVE TO SOLDERING PROCESSES swiss world connects COMPLIANT PRESS-FIT TECHNOLOGY WWW.PRECIDIP.COM TEL +41 32 421 04 00 SALES@PRECIDIP.COM BASIC TECHNOLOGY Press-fit technology, which has been around for some 25 years
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CH-2800
IEC60352-5
IEC-60352-5
pcb connectors
60352
C5440
C54400
Preci-Dip
802 PRECIDIP
CuSn4Pb4Zn4
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smd diode se
Abstract: SE 40 RECTIFIER smd diode UM-12 RW marking d 132 smd code diode smd diode UM 08 smd diode UM 09
Text: Bulletin I2121 rev. B 09/01 SAFEIR Series 10ETS.S INPUT RECTIFIER DIODE Description/ Features VF The 10ETS.S rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation technology used has reliable
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I2121
10ETS.
SMD-220
smd diode se
SE 40 RECTIFIER
smd diode UM-12
RW marking
d 132 smd code diode
smd diode UM 08
smd diode UM 09
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A004R
Abstract: RO4350 VMMK-1218 VMMK-1218-BLKG USL10
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
A004R
RO4350
VMMK-1218-BLKG
USL10
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A004R
Abstract: MM20 RO4350 VMMK-1218 VMMK-1218-BLKG 802.11abgn
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
A004R
MM20
RO4350
VMMK-1218-BLKG
802.11abgn
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LG 5804
Abstract: VMMK-1218-BLKG RGS 13/1 PHEMT marking code a BYY 56 byy 88 A004R MM20 RO4350 VMMK-1218
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
LG 5804
VMMK-1218-BLKG
RGS 13/1
PHEMT marking code a
BYY 56
byy 88
A004R
MM20
RO4350
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Untitled
Abstract: No abstract text available
Text: VMMK-1218 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package Data Sheet Description Features Avago Technologies has combined it’s industry leading E-pHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that
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VMMK-1218
VMMK-1218
100mm
250mm
AV02-1081EN
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MC74 motorola
Abstract: DL203 MC74 MC74VHC04 MC74VHCXXD MC74VHCXXDT 3B252
Text: L MOTOR O L A SEM ICO NDUCTOR TECHNICAL DATA H ex Inverter M C74VH C04 The M C74VHC04 is an advanced high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC04
51Ting
DL203
------------------------------MC74VHC04/D
MC74 motorola
MC74
MC74VHCXXD
MC74VHCXXDT
3B252
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Untitled
Abstract: No abstract text available
Text: 0Q247fll D5b B A P X Philips Semiconductors N AUER PHILIPS/DISCRETE NPN 3 GHz wideband transistor DESCRIPTION Product specification b?E ]> S BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with double emitter bonding.
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0Q247fll
BFG17A
OT143.
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spf 316
Abstract: phemt s parameters
Text: SPF-284, -484 1-6 GHz Low Noise PHEMT GaAs FET August, 1993 Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.5dB Typical at 2 GHz - High Associated Gain: 16dB Typical at 2 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available 84 Plastic Package
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SPF-284,
SPF-284
180mW
spf 316
phemt s parameters
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transistor smd zG
Abstract: npn smd zg smd transistor 513 BFG17 BFG17A smd jpS SMD transistor ZG
Text: „. e . . . • P hilips Sem iconductors DDEM7S1 D5b BIAPX N AUER PHIL I P S / D I S C R E T E P roduct specification L7E D NPN 3 GHz wideband transistor DESCRIPTION BFG17A PINNING NPN wideband transistor in a microminiature plastic S O U 43 surface mounting envelope with
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BFG17A
OT143.
transistor smd zG
npn smd zg
smd transistor 513
BFG17
BFG17A
smd jpS
SMD transistor ZG
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GM76C256 goldstar
Abstract: GM76C256-10 GM76C256 M/MAX-00
Text: GOLDSTAR TECHNOLOGY INC/ MG2Ô757 DDQ2S40 S 2JE t OBJECTIVE SPECIFICATION GoldStar GOLD STAR CO., LTD. GM76C256 32,768x8 BIT STATIC RAM HIGH PERFORMANCE Pin Configuration Description The GM76C256 is 2 6 2,14 4 bit static random access memory organized as 32,768 words by 8 bits using CMOS
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DDQ2S40
GM76C256
80mW/MHz
T-90-20
GM76C256 goldstar
GM76C256-10
M/MAX-00
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spf 316
Abstract: spf8
Text: SPF-684, -884 2-12 GHz Low Noise PHEMT GaAs FET August, 1993 84 Plastic Package Features - Pseudomorphlc HEMT Technology - Low Noise Figure: 0.5dB Typical at 4 GHz - High Associated Gain: 15dB Typical at 4 GHz - Low Cost Plastic Package - Tape and Reel Packaging Available
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SPF-684,
SPF-684
spf 316
spf8
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2JTA
Abstract: DL203 MC74VHC74 MC74VHCXXD MC74VHCXXDT MC74VHCXXM
Text: [_ M OTOROLA SEMICONDUCTOR TECHNICAL DATA Dual D-Type Flip-Flop with Set and Reset MC74VHC74 The MC74VHC74 is an advanced high speed CMOS D -type flip—flop fabricated with silicon gate C M O S technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHC74
303-675-2140or
51Ting
MC74VHC74/D
DL203
1G045S
2JTA
DL203
MC74VHCXXD
MC74VHCXXDT
MC74VHCXXM
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GM71C4256-10
Abstract: No abstract text available
Text: GOLDSTAR TECHNOLOGY INC/ 34E D _ 19 MÜ2Û757 GQD3E1S T «GST PRODUCT SPECIFICATION GM71C4256 262,144 WORDS x 4 BIT CMOS DYNAMIC RAM _ T -V 6 -2 3 -/7 Description Pin Configuration The GM71C4256 is the new generation dynamic RAM organized 262,144 x 4 Bit. The GM71C4256 utilizes
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GM71C4256
GM71C4256
402A7S7
T-90-20
GM71C4256-10
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA O ctal Bus B uffer/Line D river M C 74V H C T240A In vertin g w ith 3 -S ta te O utputs The MC74VHCT240A is an advanced high speed CM OS octal bus buffer fabricated with silicon gate C M O S technology. It achieves high speed
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T240A
MC74VHCT240A
do80217
MC74VHCT240A/D
DL203
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Untitled
Abstract: No abstract text available
Text: s TAIWAN SEMICONDUCTOR TS9001 Series 300mA CMOS LDO with Enable bl RoHS CO M PLIANCE SO T-25 5 4 1 23 Pin Definition; 1. 2. 3. 4. 5. Input G round Enable B ypass O utpu t General Description The TS9001 series is a positive voltage linear regulator developed utilizing C M O S technology featured low quiescent
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TS9001
300mA
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TI3H
Abstract: DL203 MC74VHC MC74VHCU04 TAG9 G100B
Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA H ex In verter M C74VH CU 04 U n b u ffe re d The MC74VHCU04 is an advanced high speed CMOS unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHCU04
Colorado80217
3Q3-675-2140or
MC74VHC
U04/D
DL203
TI3H
DL203
TAG9
G100B
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