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    OMRON Corporation E2F-X10E1-1 0.055M

    Proximity Sensors E2F-X10E1 W/ SPECIAL ATTRIBUTE
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    Mouser Electronics E2F-X10E1-1 0.055M
    • 1 $159.87
    • 10 $152.26
    • 100 $146.54
    • 1000 $146.54
    • 10000 $146.54
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    0.05 OM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 ISOWATT220 VNP20N07FI, VNV20N07 VNV20N0713TR

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 "OMNIFET": FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 DocID1644

    Untitled

    Abstract: No abstract text available
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120 to 400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV 0.32 ± 0.05 0.80 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		PDF RN1112MFV RN1113MFV

    2SA2154MFV

    Abstract: 2SC6026MFV
    Text: 2SA2154MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process 2SA2154MFV General-Purpose Amplifier Applications Unit: mm 0.32 ± 0.05 1 0.4 : hFE = 120~400 • Complementary to 2SC6026MFV 0.80 ± 0.05 1 0.4 1.2 ± 0.05 • Excellent hFE linearity


    Original     		PDF 2SA2154MFV 2SC6026MFV 2SA2154MFV 2SC6026MFV

    Untitled

    Abstract: No abstract text available
    Text: RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV 1.2 ± 0.05 0.22 ± 0.05 1 1 0.4 0.4 0.8 ± 0.05 Incorporating a bias resistor into the transistor reduces the number of


    Original     		PDF RN1107MFV RN1109MFV RN1108MFV RN2107MFV RN2109MFV

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07  ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R DS on I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07

    VNB20N07

    Abstract: VNP20N07FI VNV20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNP20N07F VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 VNP20N07FI VNV20N07

    mosfet current limiter

    Abstract: VNP10N07 equivalent VNP35N07 10A17 analog switch circuit using mosfet ncl 071 overvoltage protection circuit vnd7n04 VNV35N07 VNB20N07
    Text: VNP20N07FI VNB20N07/VNV20N07 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V cl amp R DS on I l im VNP20N07F I VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Ω 0.05 Ω 0.05 Ω 20 A 20 A 20 A • ■ ■ ■ ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION


    Original     		PDF VNP20N07FI VNB20N07/VNV20N07 VNP20N07F VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 mosfet current limiter VNP10N07 equivalent VNP35N07 10A17 analog switch circuit using mosfet ncl 071 overvoltage protection circuit vnd7n04 VNV35N07

    RN1101MFV

    Abstract: RN1106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05


    Original     		PDF RN2101MFVRN2106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN2106MFV RN1101MFV RN1106MFV RN2101MFV RN1106MFV RN2103MFV RN2106MFV

    Untitled

    Abstract: No abstract text available
    Text: RN2101MFV~RN2106MFV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT Process RN2101MFV,RN2102MFV,RN2103MFV RN2104MFV,RN2105MFV,RN2106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 0.22 ± 0.05 0.32 ± 0.05


    Original     		PDF RN2101MFVâ RN2106MFV RN2101MFV RN2102MFV RN2103MFV RN2104MFV RN2105MFV RN1101MFV RN1106MFV

    RN1110MFV

    Abstract: RN1111MFV RN2110MFV RN2111MFV
    Text: RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1110MFV,RN1111MFV Unit: mm z A wide range of resistor values is available for use in various circuits. z Complementary to the RN2110MFV~RN2111MFV 0.32 ± 0.05 0.80 ± 0.05 0.4


    Original     		PDF RN1110MFV RN1111MFV RN2110MFV RN2111MFV RN1111MFV RN2111MFV

    RN1112MFV

    Abstract: RN1113MFV RN2112MFV RN2113MFV
    Text: RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1112MFV,RN1113MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.22 ± 0.05 1.2 ± 0.05 z A wide range of resistor values is available for use in various circuits.


    Original     		PDF RN1112MFV RN1113MFV RN2112MFV RN2113MFV RN1113MFV RN2113MFV

    Untitled

    Abstract: No abstract text available
    Text: TPCP8303 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type U-MOSV TPCP8303 Unit: mm Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications 0.05 M A 0.475 B 2.9±0.1 A 0.8±0.05 (Q1, Q2 Common) 0.025 S Symbol 0.05 M B


    Original     		PDF TPCP8303

    Untitled

    Abstract: No abstract text available
    Text: FUNCTIONAL BLOCK DIAGRAM FEATURES Single 18-bit DAC, ±0.5 LSB INL 7.5 nV/√Hz noise spectral density 0.05 LSB long-term linearity stability <0.05 ppm/°C temperature drift 1 µs settling time 1.4 nV-sec glitch impulse Operating temperature range: −40°C to +125°C


    Original     		PDF 18-bit 20-lead AD5781 18-BIT MO-153-AC RU-20) AD5781BRUZ AD5781BRUZ-REEL7 AD5781ARUZ

    LCC3 weight

    Abstract: MURS120CSM4
    Text: MURS120CSM4 MECHANICAL DATA Dimensions in mm inches ULTRAFAST POWER RECTIFIER DIODE IN CERAMIC SURFACE MOUNT PACKAGE 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES 0.23 rad. (0.009) 3 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003)


    Original     		PDF MURS120CSM4 LCC3 weight MURS120CSM4

    Untitled

    Abstract: No abstract text available
    Text: SML2955CSM4 P–CHANNEL ENHANCEMENT MODE MOSFET MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • BVDSS =-60V 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.23 rad. (0.009) 0.64 ± 0.08 (0.025 ± 0.003)


    Original     		PDF SML2955CSM4 SML2955CSM4 MO-041BA)

    M913

    Abstract: No abstract text available
    Text: fwgm jG j T 1I0M Ü 0H ^ T # RfflO ^@i[Li©Trii ilDei VNP20N07FI VNB20N07/VNV20N07 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VNP20N07FI VNB20N07 VNV20N07 Vclamp RD6<on llbn 70 V 70 V 70 V 0.05 a 0.05 n 0.05 a 20 A 20 A 20 A • . . . . . LINEAR CURRENT LIMITATION


    OCR Scan     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNV20N07 1996SGS-THOMSON M913

    Untitled

    Abstract: No abstract text available
    Text: VNP20N07FI VNB20N07/VNV20N07 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP20N07FI VNB20N07 VNV20N07 70 V 70 V 70 V 0.05 Q. 0.05 a 0.05 n 20 A 20 A 20 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION


    OCR Scan     		PDF VNP20N07FI VNB20N07/VNV20N07 VNB20N07 VNV20N07 VNP20N07FI, VNB20N07 NB20N07-VNV20N07 PowerSO-10

    LQFP128

    Abstract: CI -dp904c
    Text: 2‘o+om + 0.055 0.145 - 0.045 0 . 10 + 0.05 LQFP128-P-1818-0.50 Unit : mm


    OCR Scan     		PDF LQFP128-P-1818-0 LQFP128 CI -dp904c

    SD-47308-001

    Abstract: No abstract text available
    Text: 10 1.20 5.08*0.05 4 ±0.05 id bi- cTbi— icTbr 1.20 I -e 1.20 *0.05 10X 12.8 2.00 E3 - 0 .9 0 ±0.05 (10X) 15.30 i.55*o.20 1.20 ±0.05 5 ±0.05 2.35*0.20 jcljsi— 3.95*0.05 t|_ p i— i q j i B -15.20- e — 16.20 -17.10 — E ffl 1.65 ±0.05


    OCR Scan     		PDF PS-27308-001. SD-47308-001 SD-47308-001

    Untitled

    Abstract: No abstract text available
    Text: 1.474+ 0 .005 [3 7.44+ 0 .13]- 0 .7 3 7 + 0 .0 0 2 " [18.72+0.05] 0 0 0 2.5 1+ 0.05] < |> 2X 00.1 0 0 [02.54] J X SIZE 16 BI-SPRING CONTACT 0 .1 9 7 + 0 .0 0 2 §EE DETAIL A [5.00+0.05] TYP. MTACT HOLE PATTERN NOTES: 1. MATERIALS AND FINISHES: INSULATOR: GLASS FILLED POLYESTER. UL 9 4 V - 0 , COLOR BLUE.


    OCR Scan     		PDF 3K6370

    Untitled

    Abstract: No abstract text available
    Text: ASSMANN Electronic C om ponents Shorting plugs Material: brass Tolerance: + 0.05 mm Finish: gold over nickel '] Z «tinned 130 Shorting plugs


    OCR Scan     		PDF