TLP350
Abstract: 20CG10 E67349 EN60747-5-2 tlp350 IGBT gate drive inverter
Text: TLP350 Preliminary TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP350 Industrial Inverter Inverter for Air Conditioner IGBT/Power MOSFET Gate Drive IH Induction Heating Unit: mm The TOSHIBA TLP350 consists of a GaAℓAs light-emitting diode and an integrated photodetector.
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TLP350
TLP350
UL1577
20CG10
E67349
EN60747-5-2
tlp350 IGBT gate drive inverter
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82c45
Abstract: 82C18
Text: UNISONIC TECHNOLOGIES CO., LTD 82CXX CMOS IC VOLTAGE DETECTORS 3 3 DESCRIPTION 2 The UTC 82CXX series are good performance 3-terminals voltage detectors and manufactured by CMOS technologies with highly accurate, low power consumption. The detection voltage is
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82CXX
82CXX
OT-23-3
OT-23
O-236)
SC-59)
100ppm/Â
OT-89
OT-25
QW-R119-010
82c45
82C18
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TLP351 VDE
Abstract: TOSHIBA IGBT DATA BOOK EN60747-5-2 TLP351 ac hight power led light circuit
Text: TLP351 TOSHIBA Photocoupler GaAℓAs IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter Unit: mm The TOSHIBA TLP351 consists of a GaAℓAs light emitting diode and a integrated photodetector. This unit is 8-lead DIP package.
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TLP351
TLP351
TLP351 VDE
TOSHIBA IGBT DATA BOOK
EN60747-5-2
ac hight power led light circuit
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NE661M05
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE661M05 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD M05 FEATURES • Low noise and high gain with low collector current NF = 1.2 dB TYP. @ VCE = 2 V, IC = 2 mA, f = 2 GHz
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NE661M05
NE661M05-T1
PU10323EJ02V0DS
NE661M05
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PS9821-2
Abstract: NL251 EN60747-5-2 PS9821-1 VDE0884 PS9821-2-A
Text: NEC's HIGH CMR , 15 Mb/s 3.3 V OPEN COLLECTOR PS9821-1/-2 OUTPUT TYPE SO8 OPTOCOUPLER DESCRIPTION PIN CONNECTION NEC's PS9821-1 and PS9821-2 are active-low type Top View high-speed photocouplers that use a GaAlAs light-emitting diode on the input side and a photodetector IC that includes
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PS9821-1/-2
PS9821-1
PS9821-2
PS9821-1
PS9821-1,
PS9821-2
NL251
EN60747-5-2
VDE0884
PS9821-2-A
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F0007
Abstract: MB3891 MB3891PFV
Text: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all
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DS04-27801-1E
MB3891
MB3891
F0007
MB3891PFV
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RQG1003UQAQF
Abstract: 1307 TRANSISTOR equivalent RQG1003UQ-TL-E SC-82AB
Text: RQG1003UQAQF NPN Silicon Germanium Transistor High Frequency Low Noise Amplifier REJ03G1538-0100 Rev.1.00 Jul 20, 2007 Features • Ideal for LNA applications. e.g. Tuner, Wireless LAN Cordless phone and etc. • High gain and low noise. MSG = 26 dB typ., NF = 0.55 dB typ. at VCE = 2 V, IC = 10 mA, f = 0.9 GHz
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RQG1003UQAQF
REJ03G1538-0100
PTSP0004ZA-A
RQG1003UQAQF
1307 TRANSISTOR equivalent
RQG1003UQ-TL-E
SC-82AB
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2244CS
Abstract: 8 pin IC S-8424AABFT-TB-G ISS184
Text: Rev.2.1_00 S-8424A Series BATTERY BACKUP SWITCHING IC The S-8424A Series is a CMOS IC designed for use in the switching circuits of primary and backup power supplies on a single chip. It consists of two voltage regulators, three voltage detectors, a power supply switch and its controller, as well as other functions.
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S-8424A
2244CS
8 pin IC
S-8424AABFT-TB-G
ISS184
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EA-0911-2006
Abstract: R5326X R5326
Text: R5326x SERIES Automatic Mode Shift Dual 150mA LDO EA-0911-2006 OUTLINE The R5326X Series are CMOS-based voltage regulator ICs with high output voltage accuracy, Typ. 5.5µA low supply current, and remarkably improved transient response compared with the conventional low
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R5326x
150mA
EA-0911-2006
R5326X
EA-0911-2006
R5326
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smd transistor A5
Abstract: smd transistor marking A5 SMD MARKING A16
Text: Transistors IC SMD Type Product specification FMY1A • Features Unit: mm ● PNP and NPN transistors have common emitters. ● Mounting cost and area can be cut in half. 4 5 1 3 Tr2 (4) (2) 2 3 (1) R1 Tr1 (5) ■ Absolute Maximum Ratings Ta = 25℃ Parameter
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32MHZ
smd transistor A5
smd transistor marking A5
SMD MARKING A16
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TK73318W
Abstract: TK73350W toko 73350 TK73333W TK733 GRM39B CM05B TK73325W grm39 regulator 93AC
Text: APPLICATION MANUAL LDO REGULATOR IC TK733xxW CONTENTS 1 . DESCRIPTION 2 . FEATURES 3 . APPLICATIONS 4 . PIN CONFIGURATION 5 . BLOCK DIAGRAM 6 . ORDERING INFORMATION 7 . ABSOLUTE MAXIMUM RATINGS 8 . ELECTRICAL CHARACTERISTICS 9 . TEST CIRCUIT 10 . TYPICAL CHARACTERISTICS
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TK733xxW
GC3-L019
TK733xxW
O-252-3.
TK73318W
TK73350W
toko 73350
TK73333W
TK733
GRM39B
CM05B
TK73325W
grm39
regulator 93AC
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NESG3031M14
Abstract: NESG3031M14-A NESG3031M14-T3-A
Text: DATASHEET NEC's NPN SiGe NESG3031M14 HIGH FREQUENCY TRANSISTOR FEATURES • THE DEVICE IS AN IDEAL CHOICE FOR LOW NOISE, HIGH-GAIN AMPLIFICATION: NF = 0.95 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 5.8 GHz
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NESG3031M14
NESG3031M14-A
NESG3031M14-T3-A
NESG3031M14
NESG3031M14-A
NESG3031M14-T3-A
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Untitled
Abstract: No abstract text available
Text: S-8355/56/57/58 Series www.sii-ic.com STEP-UP, SUPER-SMALL PACKAGE, 600 kHz, PWM CONTROL or PWM/PFM SWITCHABLE SWITCHING REGULATOR CONTROLLER Rev.8.0_00 Seiko Instruments Inc., 2002-2014 The S-8355/56/57/58 Series is a CMOS step-up switching regulator controller which mainly consists of a reference voltage
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S-8355/56/57/58
S-8355/57
S-8356/58
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VO3150A
Abstract: No abstract text available
Text: VO3150A Vishay Semiconductors 0.5 A Output Current IGBT and MOSFET Driver FEATURES • 0.5 A minimum peak output current NC 1 8 VCC • 25 kV/ s minimum common mode rejection CMR at VCM = 1500 V A 2 7 VO • ICC = 2.5 mA maximum supply current C 3 6 VO
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VO3150A
2002/95/EC
VO3150A
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: S-87x Series www.sii-ic.com HIGH WITHSTAND-VOLTAGE VOLTAGE REGULATOR WITH RESET FUNCTION Rev.8.0_00 Seiko Instruments Inc., 1997-2010 The S-87x Series is a low-power high withstand-voltage regulators with a reset function, which integrates highprecision voltage detection and voltage regulation circuits on a single chip.
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S-87x
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4856a
Abstract: 2n4856a 2N485
Text: Tem ic 2N4856A/4857A/4858A S e m i c o n d u c t ors N-Channel JFETs Product Summary Part Number VQS off 2N4856A - 4 to - 10 -4 0 50 25 5 4 2N4857A - 2 to - 6 -4 0 20 40 5 4 2N 4858A -0 .8 to - 4 -4 0 8 60 5 4 (V) loss Min (mA) V(BR)GSS Min (V) Features iDSjon) Max
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2N4856A/4857A/4858A
2N4856A
2N4857A
S-52424--
l4-Apr-97
S-52424--Rev.
14-Apr-97
4856a
2N485
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Untitled
Abstract: No abstract text available
Text: ASI 2N6515 SILICON NPN TRANSISTOR DESCRIPTION: The 2N6515 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO-92 _ . 2 0 5 15 20 . 175 4 45) DIA. MAXIMUM RATINGS lc 500 mA V ce 250 V . .2 1 0 (5 33) .1 7 0 (4 32)
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2N6515
2N6515
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2N5554
Abstract: 2N4856A 4857A 4856a sot23 fd
Text: Tem ic 2N4856A/4857A/4858A Siliconix N-Channel JFETs Product Summary P a rt N u m b e r V g S oB (V) V(BR)GSS M in (V) I d ss M in (mA) r DS(on) M ax (Û ) lö(off) lÿ p (pA) to N iy p (ns) 2N4856A - 4 to - 1 0 -4 0 50 25 5 4 2N4857A —2 to - 6 -4 0 20
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2N4856A/4857A/4858A
2N4856A
2N4857A
2N4858A
P-37406--Rev.
2N4856A
2N48S7A
2N4858A
2N5554
4857A
4856a
sot23 fd
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SH100G
Abstract: TDK tda
Text: SIEMENS CDR 3300-00 High-Speed Clock and Data Recovery Bipolar 1C Preliminary Data Features • • • • • • Data rate from 2.5 to 3.3 Gbit/s Supply range fro m -4 .0 V t o - 5 . 0 V Supply current 350 mA typ. Input sensitivity 20 mVpp differential BER = 10“ 12
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OCR Scan
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SH100G-based
19Q8-Dfi-1Fi
STM-16
P-TQFP-100-4
SH100G
TDK tda
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Untitled
Abstract: No abstract text available
Text: U 63 4 H 2 5 6 PowerStore A v a i l a b l e in Q 1 / 9 7 Features □ High-performance CMOS non volatile static RAM 32768 x 8 bits □ 25, 35 and 45 ns Access Times □ 1 0 ,1 5 and 20 ns Output Enable Access Times □ Iqq=20 mA at 200 ns Cycle Time □ Automatic STORE to EEPROM
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M3015
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Untitled
Abstract: No abstract text available
Text: ANALO G D E V IC E S High Performance Driver/Comparator Active Load on a Single Chip AD53032 F EA T U R E S 250 MHz Operation Driver/Comparator and Active Load Included O n-Chip Schottky Diode Bridge 52-Lead LQ FP Package with Built-in Heatsink FUNCTIONAL BLOCK DIAGRAM
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OCR Scan
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52-Lead
AD53032
SQ-52)
C3413-0-11/98
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Siliconix JFET Duals
Abstract: 2N5198
Text: Tem ic 2N5196/5197/5198/5199 Siliconix Monolithic N-Channel JFET Duals Product Summary P a rt N um ber VGS ofl (V) V(BR)GSS M in (V) gb M in (m S) I g M ax (pA) IVg s i - v GS2l M ax (mV) 2N5196 - 0 .7 to - 4 -5 0 1 -1 5 5 2N5197 -0 .7 to - 4 -5 0 1 -1 5
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2N5196/5197/5198/5199
2N5196
2N5197
2N5198
2N5199
P-37514--Rev.
Siliconix JFET Duals
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2N4856
Abstract: No abstract text available
Text: T em ic 2N4856 JAN/JANTX/JANTXV Series siliconix N-Channel JFETs 2N4856JAN 2N4857JAN 2N4858JAN 2N4859JAN 2N4860JAN 2N4861JAN 2N4856JANTX 2N4857JANTX 2N4858JANTX 2N4859JANTX 2N4860JANTX 2N4861JANTX 2N4856JANTXV 2N4857JANTXV 2N4858JANTXV 2N4859JANTXV 2N4860JANTXV
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OCR Scan
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2N4856
2N4856JAN
2N4857JAN
2N4858JAN
2N4859JAN
2N4860JAN
2N4861JAN
2N4857
2N4858
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L7BL05
Abstract: L78L12A
Text: r z ^ T 7# L 78 L o o S ER IES S G S -T U O M S O N K in iÊ lO IlIL IC T M D e i POSITIVE VOLTAGE REGULATORS . OUTPUT CURRENT UP TO 100 mA . OUTPUT VOLTAGES OF 5; 6; 8; 9; 12; 15; 18; 24V • THERMAL OVERLOAD PROTECTION . SHORT CIRCUIT PROTECTION . NO EXTERNAL COMPONENTS ARE RE
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L78L00
P013M
0Gbfl202
L7BL05
L78L12A
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