RTQ035N03
Abstract: 0744
Text: SPICE PARAMETER RTQ035N03 by ROHM TR Div. * RTQ035N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTQ035N03
RTQ035N03
0000E-6
541E-6
000E-3
682E-3
0000E6
73E-12
0744
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RSS130N03
Abstract: No abstract text available
Text: SPICE PARAMETER RSS130N03 by ROHM TR Div. * RSS130N03 NMOSFET model * Date: 2006/10/04 * This model includes a diode between source and drain. *D G S .SUBCKT RSS130N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS130N03
RSS130N03
0000E-6
18E-6
0000E-3
2887E-3
0000E6
3046E-9
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2057
Abstract: d 966 RTL035N03
Text: SPICE PARAMETER RTL035N03 by ROHM TR Div. * RTL035N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RTL035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTL035N03
RTL035N03
0000E-6
967E-6
000E-3
404E-3
0000E6
79E-12
2057
d 966
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rds 4501
Abstract: 4501 4501 d RSS125N03
Text: SPICE PARAMETER RSS125N03 by ROHM TR Div. * RSS125N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS125N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS125N03
RSS125N03
0000E-6
90E-6
0000E-3
4934E-3
0000E6
3039E-9
rds 4501
4501
4501 d
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RSS090N03
Abstract: diode 10e d 5027 16552 650 DIODE
Text: SPICE PARAMETER RSS090N03 by ROHM TR Div. * RSS090N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS090N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS090N03
RSS090N03
0000E-6
10E-6
0000E-3
7183E-3
0000E6
37E-12
diode 10e
d 5027
16552
650 DIODE
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RUF015N02
Abstract: No abstract text available
Text: SPICE PARAMETER RUF015N02 by ROHM TR Div. * RUF015N02 NMOSFET model * Date: 2007/03/22 * This model includes a diode between source and drain. *D G S .SUBCKT RUF015N02 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RUF015N02
RUF015N02
0000E-6
948E-6
000E-3
782E-3
0000E6
72E-12
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RSS070N05
Abstract: 74102
Text: SPICE PARAMETER RSS070N05 by ROHM TR Div. * RSS070N05 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS070N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS070N05
RSS070N05
0000E-6
64E-6
000E-3
7439E-3
0000E6
95E-12
74102
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am 5869
Abstract: RS1937 RSS110N03
Text: SPICE PARAMETER RSS110N03 by ROHM TR Div. * RSS110N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS110N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS110N03
RSS110N03
0000E-6
44E-6
0000E-3
3152E-3
0000E6
68E-12
am 5869
RS1937
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RTF025N03
Abstract: mj1133
Text: SPICE PARAMETER RTF025N03 by ROHM TR Div. * RTF025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RTF025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTF025N03
RTF025N03
0000E-6
208E-6
000E-3
985E-3
0000E6
57E-12
mj1133
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3212
Abstract: RTF015N03 RG173
Text: SPICE PARAMETER RTF015N03 by ROHM TR Div. * RTF015N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RTF015N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTF015N03
RTF015N03
0000E-6
595E-6
000E-3
0000E6
39E-12
724E-12
3212
RG173
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RSQ020N03
Abstract: No abstract text available
Text: SPICE PARAMETER RSQ020N03 by ROHM TR Div. * RSQ020N03 NMOSFET model * Date: 2006/09/28 * This model includes a diode between source and drain. *D G S .SUBCKT RSQ020N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSQ020N03
RSQ020N03
0000E-6
574E-6
000E-3
097E-3
0000E6
03E-12
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DIODE 1474
Abstract: RSS085N05 BY 235 Model 235
Text: SPICE PARAMETER RSS085N05 by ROHM TR Div. * RSS085N05 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS085N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS085N05
RSS085N05
0000E-6
24E-6
000E-3
6803E-3
0000E6
4456E-9
DIODE 1474
BY 235
Model 235
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RHU002N06
Abstract: DIODE m1 TR 610 S
Text: SPICE PARAMETER RHU002N06 by ROHM TR Div. * RHU002N06 NMOSFET model * Date: 2006/09/06 * This model includes a diode between source and drain. *D G S .SUBCKT RHU002N06 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RHU002N06
RHU002N06
0000E-6
32E-9
879E-3
0000E6
34E-12
027E-12
DIODE m1
TR 610 S
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RSS065N03
Abstract: rss065
Text: SPICE PARAMETER RSS065N03 by ROHM TR Div. * RSS065N03 NMOSFET model * Date: 2006/10/13 * This model includes a diode between source and drain. *D G S .SUBCKT RSS065N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS065N03
RSS065N03
0000E-6
424E-6
000E-3
4483E-3
0000E6
78E-12
rss065
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RTQ045N03
Abstract: MJ107
Text: SPICE PARAMETER RTQ045N03 by ROHM TR Div. * RTQ045N03 NMOSFET model * Date: 2006/09/20 * This model includes a diode between source and drain. *D G S .SUBCKT RTQ045N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTQ045N03
RTQ045N03
0000E-6
703E-6
000E-3
021E-3
0000E6
00E-12
MJ107
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RTR020N05
Abstract: No abstract text available
Text: SPICE PARAMETER RTR020N05 by ROHM TR Div. * RTR020N05 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RTR020N05 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTR020N05
RTR020N05
0000E-6
786E-6
000E-3
255E-3
0000E6
28E-12
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DIODE m1
Abstract: nmosfet RJU003N03 97157 2451 nmos transistor m112 16300E
Text: SPICE PARAMETER RJU003N03 by ROHM TR Div. * RJU003N03 NMOSFET model * Date: 2006/09/07 * This model includes a diode between source and drain. *D G S .SUBCKT RJU003N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RJU003N03
RJU003N03
0000E-6
2544E-6
000E-3
0000E6
00E-12
749E-12
DIODE m1
nmosfet
97157
2451
nmos transistor
m112
16300E
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2996
Abstract: RSQ035N03
Text: SPICE PARAMETER RSQ035N03 by ROHM TR Div. * RSQ035N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSQ035N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSQ035N03
RSQ035N03
0000E-6
952E-6
000E-3
621E-3
0000E6
70E-12
2996
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RJK005N03
Abstract: IS433
Text: SPICE PARAMETER RJK005N03 by ROHM TR Div. * RJK005N03 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT RJK005N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RJK005N03
RJK005N03
0000E-6
7040E-6
000E-3
0000E6
72E-12
868E-12
IS433
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RSR025N03
Abstract: No abstract text available
Text: SPICE PARAMETER RSR025N03 by ROHM TR Div. * RSR025N03 NMOSFET model * Date: 2006/09/19 * This model includes a diode between source and drain. *D G S .SUBCKT RSR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSR025N03
RSR025N03
0000E-6
722E-6
000E-3
478E-3
0000E6
34E-12
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0440
Abstract: D 1402 RHP030N03
Text: SPICE PARAMETER RHP030N03 by ROHM TR Div. * RHP030N03 NMOSFET model * Date: 2006/09/27 * This model includes a diode between source and drain. *D G S .SUBCKT RHP030N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RHP030N03
RHP030N03
0000E-6
536E-6
000E-3
544E-3
0000E6
00E-12
0440
D 1402
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RTR025N03
Abstract: DIODE m1 M1 diode subckt include
Text: SPICE PARAMETER RTR025N03 by ROHM TR Div. * RTR025N03 NMOSFET model * Date: 2006/09/15 * This model includes a diode between source and drain. *D G S .SUBCKT RTR025N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RTR025N03
RTR025N03
0000E-6
014E-6
000E-3
412E-3
0000E6
64E-12
DIODE m1
M1 diode
subckt include
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KP1837
Abstract: RSS100N03 9475
Text: SPICE PARAMETER RSS100N03 by ROHM TR Div. * RSS100N03 NMOSFET model * Date: 2006/10/11 * This model includes a diode between source and drain. *D G S .SUBCKT RSS100N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RSS100N03
RSS100N03
0000E-6
75E-6
0000E-3
1388E-3
0000E6
52E-12
KP1837
9475
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BY 235
Abstract: RHK005N03
Text: SPICE PARAMETER RHK005N03 by ROHM TR Div. * RHK005N03 NMOSFET model * Date: 2006/09/08 * This model includes a diode between source and drain. *D G S .SUBCKT RHK005N03 1 2 3 M1 1 2 3 3 MOS_N D1 3 1 DREV .MODEL MOS_N NMOS + LEVEL=3 + L=2.0000E-6
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RHK005N03
RHK005N03
0000E-6
8358E-6
000E-3
0000E6
420E-12
743E-12
BY 235
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