ph 4148 zener diode
Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Text: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS
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DN-40
74ABT126
74ABT2240
X3G-BZX84-C7V5
X3G-BZX84-C9V1
ph 4148 zener diode
philips zener diode ph 4148
pcf0700p
Zener Diode ph 4148
PCA1318P
ck2605
pcf0700p/051
philips Pca1318p
on4673
Zener Diode 4148
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E142 wafer format
Abstract: HEL32 MR 4710 IC 300w power amplifier circuit diagram HEL05 klt22 HEL12 HEL31 HEL16 HLT22 HLT28
Text: DL140/D Rev. 6, Jan-2001 High Performance ECL Data ECLinPS and ECLinPS Lite™ High Performance ECL Device Data ECLinPS, ECLinPS Lite, and Low Voltage ECLinPS DL140/D Rev. 6, Jan–2001 SCILLC, 2001 Previous Edition 2000 “All Rights Reserved”
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DL140/D
Jan-2001
r14525
E142 wafer format
HEL32
MR 4710 IC
300w power amplifier circuit diagram
HEL05
klt22
HEL12 HEL31
HEL16
HLT22
HLT28
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Untitled
Abstract: No abstract text available
Text: Ordering number ENA1997 Ordering Orderingnumber number: :ENA1928B ENA1997 LV4924VH Bi-CMOS IC http://onsemi.com Class-D Audio power Amplifier Power cell BTL 10Wx2ch Overview The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the
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ENA1997
ENA1928B
ENA1997
LV4924VH
LV4924VH
A1997-15/15
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OF4455
Abstract: OT239 philips AS2000P triac ot239 phx4nq60e of4453 TDA8855H OF4455 diode OF4453 diode AS2000P
Text: Philips Semiconductors Product Discontinuation Notice DN53 Exhibit A June 30, 2004 SEE DN53 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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Code357A3
30-Jun-04
VY27357A3
OF4455
OT239
philips AS2000P
triac ot239
phx4nq60e
of4453
TDA8855H
OF4455 diode
OF4453 diode
AS2000P
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HSSOP36
Abstract: No abstract text available
Text: Ordering number: ENA1997 Bi-CMOS IC LV4924VH Class-D Audio power Amplifier Power cell BTL 10Wx2ch Overview The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the previous stage. This IC is a power cell that takes in PWM signals as an input and is used to form a digital amplifier system
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ENA1997
LV4924VH
LV4924VH
A1997-15/15
HSSOP36
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Untitled
Abstract: No abstract text available
Text: Ordering number ENA1997 Ordering Orderingnumber number: :ENA1928B ENA1997 LV4924VH Bi-CMOS IC ht t p://onse m i.c om Class-D Audio power Amplifier Power cell BTL 10Wx2ch Overview The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the
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ENA1997
ENA1928B
LV4924VH
LV4924VH
A1997-15/15
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HSSOP36
Abstract: No abstract text available
Text: Ordering number: ENA1997 Bi-CMOS IC LV4924VH Class-D Audio power Amplifier Power cell BTL 10Wx2ch Overview The LV4924VH is a 2-channel full-bridge driver for digital power amplifiers. It requires a PWM modulator IC in the previous stage. This IC is a power cell that takes in PWM signals as an input and is used to form a digital amplifier system
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ENA1997
LV4924VH
LV4924VH
AES17,
A1997-15/15
HSSOP36
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k1648
Abstract: MC100EL1648 MC1648 EL14 Capacitance Varactor Diode KV 3600 uf 35 volt ac capacitor veractor 1200 ohm RESISTOR
Text: MC100EL1648 5VĄECL Voltage Controlled Oscillator The MC100EL1648 is a voltage controlled oscillator that requires an external parallel tank circuit consisting of the inductor L and capacitor (C). A varactor diode may be incorporated into the tank circuit to provide a voltage variable input for the oscillator (VCO).
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MC100EL1648
MC100EL1648
MC1648.
r14525
MC100EL1648/D
k1648
MC1648
EL14
Capacitance Varactor Diode KV
3600 uf 35 volt ac capacitor
veractor
1200 ohm RESISTOR
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PCF7952
Abstract: pcf7944 BGY270 PCF7944AT ON769 ON961 TDA10086HT pch7970 PCF7341 OH191
Text: Philips Semiconductors, Inc. Product Discontinuation Notice DN50 Exhibit A December 31, 2003 SEE DN50 NOTICE LETTER FOR APPLICABLE TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.
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VP22480-3
VP22480-5
VP22530-2
PCF7952
pcf7944
BGY270
PCF7944AT
ON769
ON961
TDA10086HT
pch7970
PCF7341
OH191
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motorola HEP cross reference
Abstract: EPT 4045 KPT23 motorola HEP 320 cross reference vef 202 manual KEP52 MC10EP016 HEP 801 hep51 HEP64
Text: BR1513/D Rev. 2, Apr-2001 ECLinPS Plus Device Data ECLinPS Plus Device Data Advanced ECL in Picoseconds BR1513/D Rev. 2, Apr–2001 SCILLC, 2001 Previous Edition 2000 “All Rights Reserved” ECLinPS, ECLinPS Lite, and ECLinPS Plus are trademarks of Semiconductor Components Industries, LLC.
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BR1513/D
Apr-2001
r14525
DLD601
motorola HEP cross reference
EPT 4045
KPT23
motorola HEP 320 cross reference
vef 202 manual
KEP52
MC10EP016
HEP 801
hep51
HEP64
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bsd214
Abstract: philips bsd215 BSD213 BSD215 BSD212 KT 117 diode t7e L7E transistor IEC134
Text: • titiS3T31 00E374S 15fl ■ N AUER P H I L I P S / D I S C R E T E APX BSD212 to BSD215 L7E D MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon M O S field-effect transistor of the N-channel enhancement mode type. These transistors are herm etically sealed in a TO-72 envelope and feature a low ON-resistance, high
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titiS3T31
00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
philips bsd215
KT 117
diode t7e
L7E transistor
IEC134
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BSD215
Abstract: bsd214 BSD212 BSD213 transistor BD 341
Text: 711QöSb S1D IPHIN BSD212 to BSD215 MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. These transistors are hermetically sealed in a TO-72 envelope and feature a low ON-resistance, high
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BSD212
BSD215
BSD213
BSD215
BSD214
DDb7717
B5D212
transistor BD 341
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transistor BD 339
Abstract: transistor BD 341 BB530 BSD214 -20/transistor BD 341
Text: •I bbS3^31 00E374S ISA ■ APX BSD212 to BSD215 N AUER PHILIPS/DISCRETE b?E D _ _ J MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTORS Symmetrical insulated gate silicon MOS field-effect transistor of the N-channel enhancement mode type.
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00E374S
BSD212
BSD215
BSD213
BSD215
BSD214
bb53031
transistor BD 339
transistor BD 341
BB530
-20/transistor BD 341
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2sb504
Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Text: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle
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HBF4727A
Abstract: ZD 607 - triac ZD 607 - triac circuit hbf 4727a TDA3310 hbf4727 HBF4740 DTL-930 7-stage frequency divider BF479S
Text: / h o f t f o f m A T E ^SEMICONDUCTOR “ PRODUCTS 1979/80 I NT RODUCTI ON This publication aims to provide condensed information on the vast range of standard devices currently produced by SGS-ATES. For easy consultation the products have been divided into several sections according to the main product
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TRANSISTOR BO 346
Abstract: transistor bd 346 TRANSISTOR BO 341 OCS30 TRANSISTOR BO 345
Text: O K I electronic com ponents QCS30 Optical PNPN Switches GENERAL DESCRIPTION T he OCS3C is an optical sw itch form ed b y co m bining a G aA s in frared light em ittin g d io d e a n d a silicon P N P N elem ent th at can w ith sta n d high voltages. T he device is encased in an 8-pin plastic
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QCS30_
OCS30
E86831
Vnu-50
h72H2H0
OCS30
TRANSISTOR BO 346
transistor bd 346
TRANSISTOR BO 341
TRANSISTOR BO 345
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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ksd 302 250v, 10a
Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Text: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle
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CB-F36c
2SD1642
2SD2182,
2SC4489,
-08S-
ksd 302 250v, 10a
irf 5630
transistor 2SB 367
IRF 3055
AC153Y
transistor ESM 2878
TIP 43c transistor
2sk116
bf199
bd643
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TRANSISTOR tip122 CHN 949
Abstract: E2955T BD706 TU F 13003 13003 Transistor NPN Power TO 126 transistor E2955T construction linear amplifier 2sc1945 LA 4301 8d679 transistor bf 175
Text: A lph an u m eric Index and C ross R eference 1 S elector G uide 2 D ata Sheets 3 Leadform and • M ounting H ardw are m A pp lications Literature 5 Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad, TMOS, Thermowatt, Unibloc, and Uniwatt are trademarks of Motorola Inc.
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38v01
TRANSISTOR tip122 CHN 949
E2955T
BD706
TU F 13003
13003 Transistor NPN Power TO 126
transistor E2955T
construction linear amplifier 2sc1945
LA 4301
8d679
transistor bf 175
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transistor BD939F
Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.
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BD933F;
BD935F
BD937F;
BD939F
BD941F
Q0M3052
OT186
BD934F,
BD936F,
BD938F,
transistor BD939F
d941
935F
b0933
939f
939-F
BD-939F
937f
BD941F
BD939F
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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Je 243
Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp
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O-225AA)
2N5655
BD157
2N5656
MJE803#
MJE703#
750/18k
BD681#
BD682#
JE210Â
Je 243
JE371
je240
JE171
JE340
transistor BD 341
bd189
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Untitled
Abstract: No abstract text available
Text: O K I electronic components QCS30 Optical PNPN Sw itches GENERAL DESCRIPTION The OCS3 3 is an optical switch form ed by com bining a G aA s infrared light em itting diode and a silicon P N PN element that can w ithstand high voltages. The device is encased in an 8-pin plastic
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QCS30
2424D
OCS30
2424Q
b724240
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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