MTP12N10E
Abstract: 2N3904 AN569
Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. Power Field Effect Transistor Designer's MTP12N10E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high
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MTP12N10E
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2N3904
AN569
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2N3904
Abstract: AN569 MTP12N10E
Text: MOTOROLA Order this document by MTP12N10E/D SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E−FET. Power Field Effect Transistor MTP12N10E Motorola Preferred Device N−Channel Enhancement−Mode Silicon Gate This advanced TMOS E−FET is designed to withstand high energy
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2N3904
AN569
MTP12N10E
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2N3904
Abstract: AN569 MTP10N10E
Text: MOTOROLA Order this document by MTP10N10E/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP10N10E TMOS IV Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced “E” series of TMOS power MOSFETs is designed to withstand high energy in the avalanche and commutation
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MTP10N10E
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2N3904
AN569
MTP10N10E
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2N3904
Abstract: AN569 MTP4N50E
Text: MOTOROLA Order this document by MTP4N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP4N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1.5 OHMS
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2N3904
AN569
MTP4N50E
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MTP10N40E
Abstract: motorola an569 thermal 2N3904 AN569
Text: MOTOROLA Order this document by MTP10N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP10N40E N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 10 AMPERES 400 VOLTS RDS on = 0.55 OHMS This advanced high voltage TMOS E–FET is designed to
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MTP10N40E
motorola an569 thermal
2N3904
AN569
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2N3904
Abstract: AN569 MTP5N40E 221A-06 MTP5N40E-D
Text: MOTOROLA Order this document by MTP5N40E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP5N40E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS on = 1.0 OHM
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2N3904
AN569
MTP5N40E
221A-06
MTP5N40E-D
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2N3904
Abstract: AN569 MTP3N50E
Text: MOTOROLA Order this document by MTP3N50E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This advanced high voltage TMOS E–FET is designed to
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2N3904
AN569
MTP3N50E
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2N3904
Abstract: AN569 MTP3N60E
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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MTP3N60E
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TFK S 417 T
Abstract: tfk s 417 TFK U 3201 M tfk 830 tfk 417 500C AN569 MTM24N45E tfk 145 TFK A 6
Text: Order this data sheet by MTM24N45E/D IMOTOROLA SEMICONDUCTOR ~ TECHNICAL DATA Designer’s TMOS Data sheet MTM24N45E E-FET ~,., \ r High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand high energy in the avalanche mode and switch efficiently.
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MTM24N45E/D
MTM24N45E
do2510
97A-02
O-204AE
TFK S 417 T
tfk s 417
TFK U 3201 M
tfk 830
tfk 417
500C
AN569
MTM24N45E
tfk 145
TFK A 6
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MR918
Abstract: MJ16006A PK MUR1100 AN952 IC 7403 p6302 MTP12N10 MTP8P10 MUR105 AM503
Text: MOTOROLA Order this document by MJH16006A/D SEMICONDUCTOR TECHNICAL DATA Designer's MJH16006A Data Sheet NPN Silicon Power Transistor 1 kV SWITCHMODE Series These transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for
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MJH16006A
MJH16006A/D*
MR918
MJ16006A
PK MUR1100
AN952
IC 7403
p6302
MTP12N10
MTP8P10
MUR105
AM503
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mtp3n6
Abstract: No abstract text available
Text: MTP3N60E Designer’s Data Sheet TMOS E−FET.™ High Energy Power FET N−Channel Enhancement−Mode Silicon Gate This advanced high voltage TMOS E−FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain−to−source diode with fast
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MTP3N6
Abstract: MTP3N60E 2N3904 AN569 tl 2N3904 TRANSISTOR
Text: MOTOROLA Order this document by MTP3N60E/D SEMICONDUCTOR TECHNICAL DATA Data Sheet TMOS E-FET. High Energy Power FET Designer's MTP3N60E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 3.0 AMPERES 600 VOLTS RDS on = 2.2 OHMS
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AN569
tl 2N3904 TRANSISTOR
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MTP50N06E
Abstract: TP50N06E diode 9.1 b3
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet M TP50N06E TMOS E-FET™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 50 AMPERES RDS on = 0.025 OHM 60 VOLTS This advanced TMOS E-FET is designed to withstand high
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15VVGS
MTP50N06E
3b72S4
MTP50N06E
TP50N06E
diode 9.1 b3
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P6302
Abstract: transistor equivalent table TL 3849 AN952
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJW16010A* Designer’s Data Sheet *M otoroii P rtfe rrtd D avtc* NPN Silicon Power Transistors 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for
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MJW16010A*
AN951)
MUR105
MUR1100
MUR405
MUR4100
AR131)
P6302
transistor equivalent table
TL 3849
AN952
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221A-06
Abstract: AN569 MTP10N40E 4803 mosfet 4801 MOSFET
Text: M O TO RO LA S E M IC O N D U C TO R T E C H N IC A L DATA Designer’s Data Sheet TM O S E -FE T ™ High Energy P o w er FET M T P 10N 40E N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to_ withstand high energy in the avalanche mode and switch efficientlyT
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MTP10N40E
221A-06
AN569
4803 mosfet
4801 MOSFET
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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S47k
Abstract: MTM6N80E DIODE 851 MOTOROLA 2N3904 AN569
Text: Order this data sheet by MTM6N80E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 6N 80E Designer’s Data Sheet TMOS E-FET™ Pow er Field E ffect lYansistor Motorola Preferred Device N-Channel Enhancem ent-M ode Silicon G ate TMOS POWER FET 6.0 AMPERES RDS on = 1-2 OHM
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MTM6N80E/D
2PHX25180T-0
MTM6N80E
S47k
DIODE 851 MOTOROLA
2N3904
AN569
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P8302
Abstract: 16006A c 3833 transistor c series transistor equivalent table transistor equivalent table 066AA MJh-16006A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH 16006A Designer’s Data Sheet NPN Silicon Power Transistor *Motorol« Pr*f*rr*d D«vtc« 1 kV SWITCHMODE Series These transistors are designed for high-voltage, high-speed, power switching In in d u c tiv e c irc u its w h e re fa ll tim e Is c ritic a l. T h e y a re p a rtic u la rly s u ite d fo r
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6006A
AN951)
MUR105
MUR1100
UR405
AR131)
P8302
16006A
c 3833 transistor
c series transistor equivalent table
transistor equivalent table
066AA
MJh-16006A
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MTA2N60E
Abstract: mtp3n6
Text: MOTOROLA SC XSTRS/R 4b E F D • b3b?5S4 00 =13203 4 ■ NOTb O rder this data sheet by M TA2N60E/D MOTOROLA SEMICONDUCTOR ■ TECHNICAL DATA D esigner’s Data Sheet MTA2N60E TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage TMOS E-FET is designed to withstand
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TA2N60E/D
MTA2N60E
221D-02
MTA2N60E
mtp3n6
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but34
Abstract: Motorola Bipolar Power Transistor Data darling
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUT34 Designer's Data Sheet 50 AMPERES NPN SILICON POWER DARLINQTON TRANSISTOR 850 VOLTS 250 WATTS SWITCHMODE Series NPN Silicon Power Darlington Transistors w ith B ase-E m itter Speedup Diode The BUT34 Darlington transistor Is designed for high-voltage, high-speed, power
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BUT34
BUT34
Motorola Bipolar Power Transistor Data
darling
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mtp4n50e
Abstract: 221A-06 AN569 TMOS E-FET FET MOSFET transistor "" 55sc
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M T P 4 N 5 0E TM O S E -FE T ™ High Energy P o w er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 4.0 AMPERES 500 VOLTS RDS on = 1-5 OHMS This advanced high voltage TMOS E -F E T is designed to
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MTP4N50E
mtp4n50e
221A-06
AN569
TMOS E-FET
FET MOSFET transistor ""
55sc
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2N60E
Abstract: MTA2N60E 1N60E MTA1N60E MTA1N60 1B5 zener diode
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTA1N60E Fully Isolated TMOS E-FET™ Pow er Field E ffect Transistor Motorola Prcforrvd Devio« N-Channel Enhancement-Mode Silicon Gate Isolated TO-22Q TMOS POWER FET 1.0 AMPERE 600 VOLTS RDS on - 8-0 OHM
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O-22Q
head4-40
AN1040.
b3b7254
2N60E
MTA2N60E
1N60E
MTA1N60E
MTA1N60
1B5 zener diode
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221A-06
Abstract: AN569 MTP8N50E
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet TMOS E-FET ™ High Energy Power FET MTP8N50E N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 8.0 AMPERES 500 VOLTS RDS on = °-8 OHM T h is a d va n ce d high vo lta g e T M O S E -F E T is d e sig n e d to
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MTH13N50E
Abstract: MTG9N50E MTH13N50 AN569 DS3903 mosfet ss 544
Text: Order this data sheet by MTG9N50E/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet Full Pak Isolated TM OS E-FET High Energy Pow er M O SFET N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 9.0 AMPERES rDS on = 0.4 OHM MAX 500 VOLTS This advanced high voltage TM O S E-FET is designed to w ith
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MTG9N50E/D
MTG9N50E/D
MTH13N50E
MTG9N50E
MTH13N50
AN569
DS3903
mosfet ss 544
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