Mosfet
Abstract: SSF10N60F
Text: SSF10N60F 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.8ohm(typ.) ID 10A TO220F Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced trench MOSFET process technology Special designed for PWM, load switching and
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SSF10N60F
O220F
dev60F
Mosfet
SSF10N60F
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Mosfet
Abstract: SSF10N60
Text: SSF10N60 600V N-Channel MOSFET Main Product Characteristics VDSS 600V RDS on 0.69Ω (typ.) ID 10A TO-220 Schematic Diagram Assignment Features and Benefits Marking and Pin Advanced MOSFET process technology Special designed for PWM, load switching and
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SSF10N60
O-220
inN60
Mosfet
SSF10N60
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RG 2006 10A 600V
Abstract: No abstract text available
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
RG 2006 10A 600V
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W20NM60
Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60FD
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
O-247
W20NM60
w20nm60fd
P20NM60FD
p20nm60
p20nm60f
mosfet 600V 100A ST
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w20nm60
Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD
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STF20NM60D
STP20NM60FD
STW20NM60FD
O-220
O-220FP
O-247
STF20NM60D
O-220FP
w20nm60
w20nm60fd
P20NM60FD
F20NM60D
STP20NM60FD
STW20NM60FD
p20nm60
mosfet 600V 100A ST
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60at
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
10N60KL-TF3-T
10N60KG-TF3-T
O-220F
10N60KL-TF1-T
10N60KG-TF1-T
O-22at
QW-R502-743
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10N60K
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
QW-R502-743
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.
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10N60K
10N60K
O-220F
O-220F1
QW-R502-743
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P10N60
Abstract: F10N60 10A600VRDS PJF10N60 PJP10N60
Text: PJP10N60 / PJF10N60 TO-220AB / ITO-220AB 600V N-Channel Enhancement Mode MOSFET FEATURES • 10A , 600V, RDS ON =1.0Ω@VGS=10V, ID=5.0A • • • • • • TO-220AB Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP10N60
PJF10N60
O-220AB
ITO-220AB
O-220AB
2002/95/EC
ITO-220AB
MIL-STD-750
P10N60
F10N60
10A600VRDS
PJF10N60
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tf 10n60
Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
tf 10n60
MOSFET 10n60
equivalent+of+10N60+mosfet
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10N60G TO-220F
Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
QW-R502-119
10N60G TO-220F
UTC10N60L,10N60L,
UTC10N60L,10N60L
utc 10n60l
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10N60G
Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60
10N60
O-220
O-220F1
O-220F2
QW-R502-119
10N60G
mosfet 10a 600v
10N60G-TF3-T
utc 10n60l
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z
10N60Z
QW-R502-936
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AOTF10N60
Abstract: VA36 MOSFET 700V 10A AOTF10N6
Text: AOT10N60 / AOTF10N60 600V, 10A N-Channel MOSFET formerly engineering part number AOT9608/AOTF9608 General Description Features The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance
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AOT10N60
AOTF10N60
AOT9608/AOTF9608
AOT10N60
AOTF10N60
O-220
O-220F
VA36
MOSFET 700V 10A
AOTF10N6
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RG 2006 10A 600V
Abstract: FQU3N60C FQU3N60CTU FQD3N60C FQD3N60CTF FQD3N60CTM
Text: QFET FQD3N60C / FQU3N60C 600V N-Channel MOSFET Features Description • 2.4A, 600V, RDS on = 3.4 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FQD3N60C
FQU3N60C
FQU3N60C
RG 2006 10A 600V
FQU3N60CTU
FQD3N60CTF
FQD3N60CTM
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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10N60Z-Q
10N60Z-Q
10N60ZL-TF1-T
10N60ZG-TF1-T
QW-R502-B05
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Untitled
Abstract: No abstract text available
Text: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT10N60/AOB10N60/AOTF10N60
AOT10N60
AOB10N60
AOTF10N60
AOT10N60L
AOTF10N60L
AOB10N60L
O-220
O-263
O-220F
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AOTF10N60
Abstract: No abstract text available
Text: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT10N60/AOTF10N60
AOT10N60
AOTF10N60
O-220
O-220F
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AOTF10N60
Abstract: No abstract text available
Text: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT10N60/AOTF10N60
AOT10N60
AOTF10N60
AOT10N60L
AOTF10N60L
O-220
O-220F
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AOWF10N60
Abstract: 262F
Text: AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOW10N60/AOWF10N60
AOW10N60
AOWF10N60
O-262
O-262F
262F
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AOTF10N60
Abstract: AOT4N60
Text: AOT10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.
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AOT10N60/AOTF10N60
AOT10N60
AOTF10N60
O-220
O-220F
AOT4N60
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AOTf10n60
Abstract: No abstract text available
Text: AOT10N60/AOB10N60/AOTF10N60 600V,10A N-Channel MOSFET General Description Product Summary The AOT10N60 & AOB10N60 & AOTF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC
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AOT10N60/AOB10N60/AOTF10N60
AOT10N60
AOB10N60
AOTF10N60
AOT10N60L
AOTF10N60L
AOB10N60L
O-220
O-263
O-220F
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sono2
Abstract: mosfet 600V 10A ic
Text: MITSUBISHI Neh POWER MOSFET FK10KM-12 HIGH-SPEED SWITCHING USE FK1OKM-12 • Voss . 600V • rDS ON (MAX) .1.18Í2 • Id . 10A
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FK10KM-12
FK1OKM-12
150ns
UJ10l/l
sono2
mosfet 600V 10A ic
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