Untitled
Abstract: No abstract text available
Text: Product specification DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS R DS(on) max -20V 42.5mΩ @ V GS = -4.5V 71mΩ @ V GS = -1.8V ID T A = +25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (R DS(ON) ) and yet maintain superior switching
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DMG3415U
AEC-Q101
DS31735
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marking 34P sot 23
Abstract: DMG3415U "marking code" 34P sot23 dmg3415u-7 J-STD-020D marking code 34P
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 42.5mΩ @ VGS = -4.5V • 53mΩ @ VGS = -2.5V • 71mΩ @ VGS = -1.8V
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
marking 34P sot 23
DMG3415U
"marking code" 34P sot23
dmg3415u-7
J-STD-020D
marking code 34P
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DMG3415U
Abstract: marking 34P sot 23 dmg3415u-7 YM 294 J-STD-020D
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 39mΩ @ VGS = -4.5V • 52mΩ @ VGS = -2.5V • 65mΩ @ VGS = -1.8V
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Original
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DMG3415U
AEC-Q101
OT-23
J-STD-020D
DS31735
DMG3415U
marking 34P sot 23
dmg3415u-7
YM 294
J-STD-020D
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V ID TA = +25°C -4.0A -2.0A Description • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage
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Original
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DMG3415U
AEC-Q101
DS31735
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PDF
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marking 34P sot23
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
marking 34P sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
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PDF
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DMG3415U-13
Abstract: "marking code" 34P sot23 marking code YW DIODE marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
DMG3415U-13
"marking code" 34P sot23
marking code YW DIODE
marking 34P sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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DMG3415U
DS31735
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PDF
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DMG3415UQ-7
Abstract: DMG3415U-7 DS31735 marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) max TA = 25°C 42.5mΩ @ VGS = -4.5V -4.0A 71mΩ @ VGS = -1.8V -2.0A -20V Description and Applications This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
621-DMG3415U-7
DMG3415U-7
DMG3415UQ-7
DMG3415U-7
marking 34P sot23
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"marking code" 34P sot23
Abstract: marking 34P sot23
Text: DMG3415U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS RDS(on) max -20V 42.5mΩ @ VGS = -4.5V 71mΩ @ VGS = -1.8V Features • • • • • • • • ID TA = 25°C -4.0A -2.0A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching
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Original
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DMG3415U
AEC-Q101
DS31735
"marking code" 34P sot23
marking 34P sot23
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marking W26 sot23
Abstract: SOT23-5 marking 016 sot23 w32 Marking c9 SOT23-5 W32 MARKING SOT23-6 MARKING b4 sot89-5 PAD Marking P35 sot89 SOT23-5 MARKING g5 Marking code 33 29 SOT89
Text: PACKAGE OUTLINES Linear ICs SURFACE MOUNT PACKAGES SOT23-3 SOT-23 0.7 1.0 3 e1 2.4 Marking e 0.95 e 0.95 e1 1.90 Recommended Mounting Pad + 0.1 0.4 0.95 2 1.6 0.1 1.1 0 - 0.1 1.4 max (0.3) 2.9 max. e 15 0.95 (0.4) 0.15 e + 0.1 1 C1 0.1 + 0.3 2.8 Dimensions are shown in millimeters
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OT23-3
OT-23)
OT23-5
OT-25)
TK73249M
OT23L-8
TK73250M
TK73255M
marking W26 sot23
SOT23-5 marking 016
sot23 w32
Marking c9 SOT23-5
W32 MARKING
SOT23-6 MARKING b4
sot89-5 PAD
Marking P35 sot89
SOT23-5 MARKING g5
Marking code 33 29 SOT89
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smd diode c539
Abstract: samsung sens r20 smd diode marking C535 toshiba dvd hdd schematic diagram RA57 1400l toshiba hdd schematic board st smd diode marking code C701 SMD RA57 logitech 3 button
Text: 5 Schematic Diagrams and PCB Silkscreen 5-1-5 Parts List SEC Code Location Description and Specification J504 J503 J502 PCMCIA SOCKET J514 J521 J506 J500 3701-001026 3701-001035 3701-001036 3709-001119 3710-000253 3711-003392 3711-003987 3722-000218 15P,2R,FEMALE,SMD-S,AUF
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S630/S670
BA60-00030A
BA68-40005L
BA70-00030A
BA72-00063A
BA73-00001A
BA92-00073A
0404agrams
smd diode c539
samsung sens r20
smd diode marking C535
toshiba dvd hdd schematic diagram
RA57
1400l
toshiba hdd schematic board
st smd diode marking code C701
SMD RA57
logitech 3 button
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GFB7400D
Abstract: FEY101B TCA290A Rifa pmr 2026 EF184 ORP52 Mullard Mullard quick reference guide GZF1200 ITT A2610 YD 6409
Text: AN INTRODUCTION TO: Cartwright ELECTRONIC COMPONENTS 517 LAWMOOR STREET DIXONS BLAZES INDUSTRIAL ESTATE GLASGOW G5 041-429 7771 Cartwright Electronic Components started trading in April, 1971 as the electronics division of John T. Cartwright & Sons ERD North Ltd . From very modest
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