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    "DUAL TRANSISTORS" RESISTANCE Search Results

    "DUAL TRANSISTORS" RESISTANCE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    "DUAL TRANSISTORS" RESISTANCE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2907A PNP bipolar transistors

    Abstract: BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3


    Original     		PDF O-92d 2907A PNP bipolar transistors BC 148 TRANSISTOR DATASHEET TRANSISTOR BC 450 pnp diode S6 78A transistors bf 517 BFG sot89 BC 327 SOT 23 BAS20 SOT23 DIODE TA 70/04 bcp 846

    transistors BC 543

    Abstract: 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5
    Text: Selection Guide RF-Transistors and MMICs MOS Field-Effect Transistors. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Dual-Gate GaAs FETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2


    Original     		PDF OT-23 OT-363 OT-143 transistors BC 543 183W Diode BAW 62 BCR191P SOT23 BCV 27 TRANSISTOR BC 530 sot-23 p1 diode S6 78A mmic amplifier sot-89 p4 diode sot 143 s5

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD2H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION The UTC UD2H are Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate interference.


    Original     		PDF OT-26 QW-R218-018

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UD3H Preliminary DUAL TRANSISTOR GENERAL PURPOSE DUAL DIGITAL TRANSISTORS „ DESCRIPTION 6 The UTC UD3H is Dual Digital Transistors including a NPN transistor and a PNP transistor. The transistor elements are independent to eliminate, interference.


    Original     		PDF OT-26 QW-R218-020

    16pin pwm

    Abstract: TB6561NG SDIP-24-300-1
    Text: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561NG TB6561NG SDIP-24--300-1 16pin pwm SDIP-24-300-1

    TB6561NG

    Abstract: No abstract text available
    Text: TB6561NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561NG TB6561NG SDIP-24--300-1

    TB6561FG

    Abstract: No abstract text available
    Text: TB6561FG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561FG Dual Full-Bridge Driver IC TB6561FG The TB6561FG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561FG TB6561FG SSOP30-P-375-1

    TB-6561

    Abstract: TB6561N SDIP-24-300-1
    Text: TB6561N Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561N Dual Full-Bridge Driver IC The TB6561N is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561N TB6561N SDIP-24--300-1 TB-6561 SDIP-24-300-1

    TB6561NG

    Abstract: No abstract text available
    Text: TB6561NG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561NG Dual Full-Bridge Driver IC for DC Motors The TB6561NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561NG TB6561NG SDIP-24--300-1 62led

    Untitled

    Abstract: No abstract text available
    Text: TB6561N/NG Preliminary TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561N/NG Dual Full-Bridge Driver IC The TB6561N/NG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561N/NG TB6561N/NG

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)

    TB6561FG

    Abstract: No abstract text available
    Text: TB6561FG TOSHIBA Bi-CMOS Integrated Circuit Silicon Monolithic TB6561FG Dual Full-Bridge Driver IC for DC Motors TB6561FG The TB6561FG is a dual bridge driver IC for DC brush motor that contains MOS transistors in an output stage. By using low ON-resistance MOS transistors and PWM current


    Original     		PDF TB6561FG TB6561FG SSOP30-P-375-1

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW 500mW 86mW/Â MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON DUAL TRANSISTORS 2N3019DCSM • High Voltage, High Current Dual Small Signal NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For General Purpose Amplifier and High Speed Switching Applications. • Screening Options Available.


    Original     		PDF 2N3019DCSM 500mW MO-041BB)

    Untitled

    Abstract: No abstract text available
    Text: DUAL NPN SWITCHING TRANSISTORS 2N2369ADCSM • Dual Silicon Planer Epitaxial NPN Transistors • Hermetic Ceramic Surface Mount Package • Designed For High Speed Switching Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N2369ADCSM 200mA 360mW MO-041BB)

    sot553

    Abstract: EMG5
    Text: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single


    Original     		PDF OT-553 OT-553 sot553 EMG5

    EMG5

    Abstract: No abstract text available
    Text: EMG2DXV5T1, EMG5DXV5T1 Preferred Devices Product Preview Dual Bias Resistor Transistors http://onsemi.com NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS This new series of digital transistors is designed to replace a single


    Original     		PDF OT-553 EMG5

    2N3904DCSM

    Abstract: 2N3904D dual npn 500ma LE17
    Text: SILICON EPITAXIAL DUAL NPN TRANSISTORS 2N3904DCSM • Dual Silicon Planar NPN Transistors. • Hermetic Ceramic Surface Mount Package. • Designed For General Purpose and Switching Applications. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated


    Original     		PDF 2N3904DCSM 200mA 500mW 600mW MO-041BB) 2N3904DCSM 2N3904D dual npn 500ma LE17

    Untitled

    Abstract: No abstract text available
    Text: IMH23 Transistors Dual digital transistors IMH23 External dimensions Unit : mm Features In addition to the features of regular digital transistors. 1) Low saturation voltage, typically VCE (sat) =40mV at IC / IB=50mA / 2.5mA, makes these transistors ideal for muting circuits.


    Original     		PDF IMH23 600mA. DTC643T

    Untitled

    Abstract: No abstract text available
    Text: IMD16A Transistors Power management dual digital transistors IMD16A zDimensions (Unit : mm) zFeatures 1) Two digital class transistors in a SMT package. 2) Up to 500mA can be driven. 3) Low VCE(sat) of drive transistors for low power dissipation. (4) (5)


    Original     		PDF IMD16A 500mA SC-74 IMD16A

    MFE3020

    Abstract: MFE3021
    Text: MFE3020 silicon MFE3021 DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS DUAL P-CHANNEL MOS FIELD-EFFECT TRANSISTORS (Type C) Enhancement Mode (Type C| MOS Field-Effect Transistors de­ signed primarily for low power, chopper or switching applications. Low Reverse Gate Current —


    OCR Scan     		PDF MFE3020 MFE3021 MFE3021) MFE3020 MFE3021

    MD3762

    Abstract: MD3762F MQ3762 rfl3
    Text: MD3762 silicon MD3762F MQ3762 PNP SILICON DUAL TRANSISTORS MULTIPLE SILICON ANNULAR TRANSISTORS . . . designed for use as differential amplifiers, dual general-purpose amplifiers, and temperature compensation amplifiers. • Collector-Emitter Breakdown Voltage —


    OCR Scan     		PDF MD3762 MD3762F MQ3762 MD3762 MQ3762 rfl3

    diode S6 78A

    Abstract: TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor
    Text: SIEM EN S Selection Guide RF-Transistors and MMICs MOS Field-Effect Dual-Gate GaAs FETs. 14


    OCR Scan     		PDF O-92tl O-92d diode S6 78A TRANSISTOR PNP BA RT SOT 89 mmic CEA SOT363 32N45 transistor 6bw TRANSISTOR BC 545 BF1012S 6bw sot-23 up 6103 s8 6bw 12 transistor

    MPQ2369

    Abstract: MHQ2369 MHQ2906 2N2483 2N2484 MPQ2483 MPQ2484 MPQ2906 MPQ2907
    Text: MPQ2369 SILICON MPQ2483 MPQ2484 For Specifìcations, See MHQ2369 Data. (SILICON) QUAD DUAL IN-LINE NPN SILICON ANNULAR AMPLIFIER TRANSISTORS QUAD DUAL IN-LINE NPN SILICON AMPLIFIER TRANSISTORS . . . designed for low-level, high-gain amplifier applications.


    OCR Scan     		PDF MPQ2369 MHQ2369 MPQ2483 MPQ2484 2N2483 2N2484 O-116 MPQ2483 MPQ2369 MHQ2906 2N2484 MPQ2484 MPQ2906 MPQ2907