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    "128K X 8" SRAM PLCC Search Results

    "128K X 8" SRAM PLCC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TN28F010-150-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-90-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TF28F010-90 Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    TN28F010-120-G Rochester Electronics LLC 28F010 - 128K X 8 Flash Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC SRAM Visit Rochester Electronics LLC Buy

    "128K X 8" SRAM PLCC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Memory

    Abstract: No abstract text available
    Text: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4


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    512Kx8/256Kx16/128Kx32, 30A167-00 FTS128KX32XP FTS128KX32XP/XHP 68-pin FTS128KX32XP/XHP Memory PDF

    32-PIN

    Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


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    DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC PDF

    DS1245

    Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


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    DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin DS1245 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC PDF

    SRAM 34 pin

    Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


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    DS1245W 1024k 32-pin SRAM 34 pin 34-PIN DS1245 DS1245AB DS1245W DS1245W-150 DS9034PC PDF

    100L08

    Abstract: GLT710008 8X13
    Text: G -LINK GLT6100L08 Ultra Low Power 128k x 8 CMOS SRAM Nov 2000 Rev. 02 Features : Description : ∗ The GLT6100L08 is a low power CMOS Static RAM organized as 131,072 words by 8 bits. Easy memory expansion is provided by an active LOW CE1 Low-power consumption.


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    GLT6100L08 GLT6100L08 GLT44016-40J4 256Kx16 400mil 8x20mm 100L08 GLT710008 8X13 PDF

    DS1245

    Abstract: DS1245AB DS1245W DS9034PC
    Text: DS1245W PRELIMINARY DS1245W 3.3V 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or


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    DS1245W 1024K DS1245 DS1245AB DS1245W DS9034PC PDF

    32-PIN

    Abstract: 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


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    DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin 34-PIN DS1245 DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC PDF

    DS1645AB

    Abstract: DS1645Y DS1645Y-70
    Text: DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM NC 1 32


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    DS1645Y/AB 1024K DS1645Y/AB DS1645AB DS1645Y DS1645Y-70 PDF

    DS1645Y-120

    Abstract: 34-pin 32-PIN DS1645AB DS1645Y DIP SWITCH 10 PIN DS1645 Robinson Nugent socket DS1645Y-70
    Text: DS1645Y/AB DS1645Y/AB Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM NC 1 32


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    DS1645Y/AB 1024K DS1645Y/AB DS34PIN DS1645Y-120 34-pin 32-PIN DS1645AB DS1645Y DIP SWITCH 10 PIN DS1645 Robinson Nugent socket DS1645Y-70 PDF

    DS1245

    Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC
    Text: DS1245Y/AB 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles


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    DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin DS1245 34-PIN DS1245AB DS1245AB-70 DS1245AB-85 DS1245Y DS1245Y-70 DS9034PC PDF

    DS1245

    Abstract: DS1245AB DS1245AB-100 DS1245Y DS1245Y-100 DS1245Y-120 DS9034PC
    Text: DS1245Y/AB DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM, EEPROM or Flash memory


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    DS1245Y/AB 1024K DS1245 DS1245AB DS1245AB-100 DS1245Y DS1245Y-100 DS1245Y-120 DS9034PC PDF

    32-PIN

    Abstract: DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC SRAM 34 pin
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,


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    DS1245W 1024k 100ns 32-pin DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC SRAM 34 pin PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,


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    DS1245W 1024k 100ns 32-pin 68-pin DS9034PC PDF

    a034

    Abstract: 32-PIN DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES • •         PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,


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    DS1245W 1024k 100ns 32-pin a034 DS1245 DS1245W DS1245W-100 DS1245W-100IND DS1245W-150 DS1245WP-100 DS9034PC PDF

    32-PIN

    Abstract: 34-PIN DS1245 DS1245AB DS1245W DS1245W-100 DS1245W-150 DS9034PC
    Text: DS1245W 3.3V 1024k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM,


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    DS1245W 1024k 100ns 32-pin 34-PIN DS1245 DS1245AB DS1245W DS1245W-100 DS1245W-150 DS9034PC PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |I C R O N 128K X M T 58C 1289 9 S Y N C H R O N O U S SRAM 128K x 9 SRAM SYNCHRONOUS SRAM FULLY REGISTERED INPUTS AND OUTPUTS FEATURES PIN ASSIGNMENT Top View T im ing specific to SPARC m icroprocessor Fast cycle times: 12,16.6 and 20ns Fast clock to d ata valid: 6, 8 and 10ns


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    32-Pin access/12ns access/16 access/20ns MT58C1289 T58C1289 MT5BC12B9 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 'W 128K x 32 Static RAM M odule Features Functional Description • High-density 4-megabit SRAM module T h e C Y M 1836 is a high-perform ance 4-m egabit static R A M m odule organized as 128K w ords by 32 bits. This m odule is constructed from fo u r 128K x 8 SR A M s in


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    1836PM 64-Pin 1836PZ PDF

    cs312

    Abstract: No abstract text available
    Text: CYM1836 CYPRESS SEMICONDUCTOR 'W 128K x 32 Static RAM M odule Features Functional Description • Hieh-density 4-megabit SRAM module The CYM1836 is a high-performance 4-megabit static RAM module organized as 128K words by 32 bits. This module is constructed from four 128Kx 8 SRAMs in


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    CYM1836 1836PJ-20C 1836PM 1836PZ-20C CYM1836PJ-- CYM1836PM-- CYM1836PZ-- cs312 PDF

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR DS1645Y/AB, DS1645YLPM/ABLPM Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM or EEPROM


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    DS1645Y/AB, DS1645YLPM/ABLPM 1024K 32-pin DS1645Y/AB) DS1645YLPM) DS1645Y DS1645YLPM/ABLPM PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1645Y/AB DALLAS SEMICONDUCTOR DS1645Y/AB Partitionable 1024K NV SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss • Directly replaces 128K x 8 volatile static RAM


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    DS1645Y/AB 1024K 2bmi30 DS1645Y/AB 34-PIN 68-pin 34P-SM HIS-40001-04 PDF

    dallas sram nonvolatile

    Abstract: No abstract text available
    Text: DS1345YLPM/ABLPM PRODUCT PREVIEW DS1345YLPM/ABLPM DALLAS SEMICONDUCTOR 1024K Nonvolatile SRAM with Power Monitors FEATURES PIN ASSIGNMENT • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM


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    DS1345YLPM/ABLPM DS1345YLPM) DS1345ABLPM) DS1345YLPM/ABLPM 68-pin dallas sram nonvolatile PDF

    Untitled

    Abstract: No abstract text available
    Text: DS1345YLPM/ABLPM PRODUCT PREVIEW DS1345YLPM/ABLPM DALLAS 1024K Nonvolatile SRAM with Power Monitors SEMICONDUCTOR PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 128K x 8 volatile static RAM or EEPROM


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    DS1345YLPM/ABLPM 1024K DS1345YLPM) DS1345ABLPM) DS1345YLPM/ABLPM 68-pln 576-bit, PDF

    DS1245

    Abstract: 32-PIN 34-PIN DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS9034PC DSI245AB-85
    Text: DS1245Y/AB 1024k N o n vo la tile SRAM www.dalsemi.com PIN ASSIGNMENT FEATURES 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 128k x 8 volatile static RAM, EEPROM or Flash memory


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    DS1245Y/AB 1024k DS1245Y) DS1245AB) 32-pin DS1245Y/AB DS1245 34-PIN DS1245AB DS1245AB-70 DS1245Y DS1245Y-70 DS9034PC DSI245AB-85 PDF

    7C340

    Abstract: No abstract text available
    Text: AT&T Advance Data Sheet January 1992 ATT7C340 Microelectronics High-Speed CMOS 1 Mbit 128K x 8 SRAM Synchronous, Pipelined Architecture TTL Compatible Common I/O Features • High Speed — 10 ns maximuim access times ■ Registered addresses, data I/O, and control inputs


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    ATT7C340 32-pin, ATT7C340 7C340 32-Pin ATT7C340J-25 ATT7C340J-- PDF