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    DSAE0013924.pdf

    • Infineon Technologies
    • SGB10N60A Fast IGBT in NPT-technology C · 75% lower Eoff compared to previous generation combined with low conduction losses · Short circuit withstand time ­ 10 µs G E · Designed for:
    • Original
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    DSAE0013924.pdf preview Download Datasheet

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    g10n60 G10N60A PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A

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