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    DSAISS00097822.pdf

    • Toshiba
    • MICROWAVE POWER GaN HEMT TGI8596-50 FEATURES ï½¥BROAD BAND INTERNALLY MATCHED HEMT ï½¥HIGH POWER Pout= 47.0dBm at Pin= 41.0dBm ï½¥HIGH GAIN GL= 9.0dB at 8.5GHz to 9.6GHz ï½¥HERMETICALLY SEAL
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    DSAISS00097822.pdf preview Download Datasheet

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