DSAZIHA2X00039280.pdf
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GeneSiC Semiconductor
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GA100JT12-227
Normally â OFF Silicon Carbide
Junction Transistor
VDS
=
10 mΩ
ID (Tc = 25°C)
=
160 A
ID (Tc = 115°C)
=
100 A
hFE (Tc = 25°C)
=
104
Package
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Original
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