DSAZSAA000624.pdf
- Toshiba
- 1SS395 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS395 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Maxi
- Original
-
Price & Stock Powered by
Findchips
