Scans-00114796.pdf
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-  HIGH VOLTAGE SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTORS 2N6449 2N6450 GEOMETRY 559, PG. 60 ⢠HIGH BVQSS- ⢠â 300V MIN (2N6449) ⢠HIGH POWER RATING . . . 5W ELECTR
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