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DSA2IH00127723.pdf
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PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR FEATURES OUTPUT POWER AT 1dB COMPRESSION POINT: 27.5 dBm TYP 0 F = 1.9 GHz, Vce = 3.6 V, Class AB, Duty 1/8 4 PIN MINI MOLD PACKAGE: NE6903
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NE68839