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    Scans-002930.pdf

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    • Power F-MOS FET 2SK12Ó3 2SK1263 Silicon N-channel Power F-MOS FET ■ Features • Low ON resistance Rds (on) : RDS (on) 1 = 0.04ft (typ.) • High switching rate : tf= 195ns (typ.) • No
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    2SK12 2SK1263 SC-65
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