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Scans-00156874.pdf
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CEM9935 _March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠20V, 4A, rds(on)=60m Q @Vgs=4.5V. Rds(on)=80iti Q @Vgs=2.5V. ⢠Super high dense cell design for extr
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ECAD Model
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