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    Scans-00156784.pdf

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    • March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 60V, 0.115A, Rds(ON)=7.5Q @VGS=10V. Rds(on)=7.5Q @Vgs=5V. • High dense cell design for low Rds(on). • Rugged and
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