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Scans-00156784.pdf
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March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES ⢠60V, 0.115A, Rds(ON)=7.5Q @VGS=10V. Rds(on)=7.5Q @Vgs=5V. ⢠High dense cell design for low Rds(on). ⢠Rugged and
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ECAD Model
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2N7002
2N7002 60V SOT-23
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