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    DSAHI00077183.pdf

    • International Rectifier
    • IRG7PH50K10DPbF IRG7PH50K10D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V IC = 50A, TC =100°C tSC 10µs, TJ(max) = 150°C VCE(ON) typ. = 1.9V @ IC = 35A
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    DSAHI00077183.pdf preview Download Datasheet

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    50A 1200V irg7ph50 IRG7PH50K10D IRG7PH50K10D-EPBF IRG7PH50K10DPBF

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