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DSAASSA0004583.pdf
Manufacturer
Toshiba
Partial File Text
TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M × 8 BIT) CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Elect
Type
Original
ECAD Model
Part Details
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TC58NYG1
tc58nyg1s3ebai5
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