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    DSASW00214389.pdf

    • IXYS
    • DE150-501N04A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching VDSS Test Conditions VDSS TJ = 25°C to 150°C 500 VDGR TJ = 25°C to 150°
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