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    DSA00534515.pdf

    • ON Semiconductor
    • NGB8206N Ignition IGBT 20 A, 350 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use
    • Original
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    DSA00534515.pdf preview Download Datasheet

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