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    DSAEDA00020136.pdf

    • Infineon Technologies
    • IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS • Very low on-resistance R DS(on) 60 mW ID • Excellent gate charge
    • Original
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    DSAEDA00020136.pdf preview Download Datasheet

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