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DSA0096246.pdf
Manufacturer
Toshiba
Partial File Text
TOSHIBA TIM5359-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features · High power - P1dB = 36.0 dBm at 5.3 GHz to 5.9 GHz · High gain - G1dB = 9.0 dB at 5.3 GHz to
Datasheet Type
Original
ECAD Model
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TIM5359-4