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DSAIHSC000104254.pdf
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TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs (Chip Form) Features ⢠High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z ⢠High gain - G 1dB = 6.0 dB at f = 23 GHz ⢠Su
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