DSAISS00031372.pdf
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International Rectifier
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IRFH5406PbF
HEXFET® Power MOSFET
VDS
60
V
RDS(on) max
14.4
mΩ
Qg (typical)
21
nC
RG (typical)
1.1
Ω
40
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
PQF
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Original
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