DSAZIHA2X00039232.pdf
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GeneSiC Semiconductor
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GA50SICP12-227
Silicon Carbide Junction
Transistor/Schottky Diode Co-Pack
VDS
=
20 mΩ
ID (Tc = 25°C)
=
80 A
ID (Tc = 115°C)
=
50 A
hFE (Tc = 25°C)
=
104
Pa
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Original
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