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    DSA00763539.pdf

    • Toshiba
    • MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM1011-8UL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 27.0dBm Single Carrier Level HIGH POWER P1dB=39.5 dBm
    • Original
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    DSA00763539.pdf preview Download Datasheet

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