Scans-0011148.pdf

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Partial File Text ï»¿^Lj National M^y Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features â 1.7 A, 20 V. RDS(0N1 = 0.14 O @ VGS= 2.7 V ^ds(ON) = 0.11 n @ VGS= 4.5 V. â
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ECAD Model

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