DSA2IH0057616.pdf
- Not Available
- 2SJ496 Silicon P-Channel MOS FET High Speed Power Switching HITACHI Features · Low on-resistance RD S (H n ) = 0.12Q typ. (at V G S = - 1 0 V , ID - - 2 .5 A) · · 4V gate drive devices. Large cu
- Scan
Findchips