Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DSA2IH00207026.pdf

    • Not Available
    • TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 36.5 dBm at 14.0 GHz to 14.5 GHz · High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz ·
    • Scan

    DSA2IH00207026.pdf preview Download Datasheet

    Price & Stock Powered by Findchips

    Newly Added Datasheets | Privacy Policy | Digital Services Act | Contact Us | About Us

    Copyright © 2024.

    Supplyframe Tracking Pixel