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    DSA0070457.pdf

    • Toshiba
    • GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · En
    • Original
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    DSA0070457.pdf preview Download Datasheet

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    GT30J121 GT30J324 IGBT GT30J121

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