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DSA0070457.pdf
Manufacturer
Toshiba
Partial File Text
GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · En
Type
Original
ECAD Model
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GT30J121
GT30J324
IGBT GT30J121