DSAZIHA100025538.pdf
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American Microsemiconductor
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ECG325 Transistors
Si NPN Power BJT
Military/High-RelN
V(BR)CEO (V)20
V(BR)CBO (V)40
I(C) Max. (A)7.5
Absolute Max. Power Diss. (W)115
Maximum Operating Temp (øC)
I(CBO) Max. (A)
@V(CBO) (V)
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Original
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