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    BF909WR datasheet

    • NXP Semiconductors
    • BF909WR - N-channel dual-gate MOS-FET - CIS TYP: 3.6 pF; COS: 2.3 pF; ID: 40 mA; IDSS: 12 to 20 mA; IDSS min.: 2.3 mA; Noise figure: 2@800MHz dB; Note: Partly internal bias ; Remarks: VHF and UHF ; -V(P)GS MAX: 1 V; VDSmax: 7 V; YFS min.: 36 mS
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