DSA2IH00177914.pdf

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Partial File Text SIEMENS IGBT (High Power Switch) Preliminary Data VC E = 1200 V /c = 1.5 A · · · · · · · · · N channel MOS input (voltage-controlled) Low forw ard voltage drop High sw itching speed Very low tail
Type Scan
ECAD Model

DSA2IH00177914.pdf preview Download Datasheet