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    DSA00163675.pdf

    • Panasonic
    • IGBTs 2PG401 Insulated Gate Bipolar Transistor s Features unit: mm q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the
    • Original
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    DSA00163675.pdf preview Download Datasheet

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    2PG401

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