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    DSAZIHA100017759.pdf

    • American Microsemiconductor
    • 2N1808 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V(BR)CEO (V) V(BR)CBO (V)25 I(C) Max. (A)300m Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)5.0u @V
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