DSA2IH00100598.pdf

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Partial File Text MITSUBISHI SEMICONDUCTOR <GaAs FET> | M G F0906B | _______ L, S BAND POWER GaAs FET DESCRIPTION The M G F 0 9 0 6 B , GaAs FET with an N-channel schottky gate, is designed for use in UHF band
Type Scan
ECAD Model

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