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    DSAZIHA100017490.pdf

    • American Microsemiconductor
    • 2N1176A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V(BR)CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)100õ I(CBO) Max. (A) @V
    • Original

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