Scans-00128267.pdf

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Partial File Text ï»¿SAMSUNG SEMICONDUCTOR INC_ IME D | 7^4142 Clflak*H3 Q | T- tf-itf KSK30 SILICON N-CHANNEL JUNCJION FET LOW NOISE PRE-AMP. USE High Input ImpodancÂ©: Igu= 1nA (MAX) Low Noise: NF=0.5dB (TYP) High
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