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    DSASW00214393.pdf

    • IXYS
    • DE275-501N16A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Ideal for Class C, D, & E Applications VDSS Test Conditions VDSS TJ = 25°C to 1
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    DSASW00214393.pdf preview Download Datasheet

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