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    DSAISS00031397.pdf

    • International Rectifier
    • IRFH5210PbF HEXFET® Power MOSFET VDS 100 V RDS(on) max 14.9 mΩ Qg (typical) 40 nC RG (typical) 1.7 Ω 55 A (@VGS = 10V) ID (@Tc(Bottom) = 25°C)
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