DSAISS00031397.pdf
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International Rectifier
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IRFH5210PbF
HEXFET® Power MOSFET
VDS
100
V
RDS(on) max
14.9
mâ¦
Qg (typical)
40
nC
RG (typical)
1.7
â¦
55
A
(@VGS = 10V)
ID
(@Tc(Bottom) = 25°C)
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Original
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