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    DSASW0047926.pdf

    • Honeywell
    • HXVN0100 HXNV0100 1Megabit 64K x 16 Non-Volatile Magneto-Resistive RAM Features Fabricated on S150 Silicon On Insulator (SOI) CMOS Underlayer Technology 150 nm Process (Leff = 130 nm)
    • Original
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    DSASW0047926.pdf preview Download Datasheet

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    Department of Defense honeywell mram HXNV0100 HXVN0100 MIL-PRF38535 Tunneling Magnetoresistance

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