DSAIH00058944.pdf

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Partial File Text International 1®]Rectifier HEXFET® Power MOSFET · · · · · · Logic-Level Gate Drive Ad van ced P rocessTechnology Isolated Package High Voltage Isolation = 2.5 K V R M S © Sink to Lead Creepage Dist.
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ECAD Model

DSAIH00058944.pdf preview Download Datasheet